Surface passivation realized by Al2O3 for crystalline silicon solar cells

Yanlong Meng, Rui Jia, Yun Sun, Shijian Wang, Zhao Xing, Wuchang Ding, Haofeng Li, Chen Chen, Bing Sun, Shangqing Li

Research output: Contribution to journalArticlepeer-review


Al2O3 deposited by atomic layer deposition was used onto the surface of p-type crystal silicon solar cells for the purpose of surface passivation. By comparing with p-type solar cells which passivated by conventional thermal SiO2, the open circuit voltage of cells passivated by Al2O3 is enhanced by 5% and the short circuit current is enhanced by 17.4% without any surface texture process. Furthermore, application of Al2O3 passivation can avoid the damage on emitter which occurs in the process of oxidation in high temperature. At last, excellent surface passivating ability of Al2O3 which deposited by atomic layer deposition was demonstrated in this paper.

Original languageEnglish (US)
Pages (from-to)492-497
Number of pages6
JournalTaiyangneng Xuebao/Acta Energiae Solaris Sinica
Issue number3
StatePublished - Mar 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology


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