Abstract
Al2O3 deposited by atomic layer deposition was used onto the surface of p-type crystal silicon solar cells for the purpose of surface passivation. By comparing with p-type solar cells which passivated by conventional thermal SiO2, the open circuit voltage of cells passivated by Al2O3 is enhanced by 5% and the short circuit current is enhanced by 17.4% without any surface texture process. Furthermore, application of Al2O3 passivation can avoid the damage on emitter which occurs in the process of oxidation in high temperature. At last, excellent surface passivating ability of Al2O3 which deposited by atomic layer deposition was demonstrated in this paper.
Original language | English (US) |
---|---|
Pages (from-to) | 492-497 |
Number of pages | 6 |
Journal | Taiyangneng Xuebao/Acta Energiae Solaris Sinica |
Volume | 35 |
Issue number | 3 |
State | Published - Mar 2014 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Renewable Energy, Sustainability and the Environment
- Energy Engineering and Power Technology