Surface passivation realized by Al₂O₃ for crystalline silicon solar cells

Al₂O₃ deposited by atomic layer deposition was used onto the surface of p-type crystal silicon solar cells for the purpose of surface passivation. By comparing with p-type solar cells which passivated by conventional thermal SiO₂, the open circuit voltage of cells passivated by Al₂O₃ is enhanced by 5% and the short circuit current is enhanced by 17.4% without any surface texture process. Furthermore, application of Al₂O₃ passivation can avoid the damage on emitter which occurs in the process of oxidation in high temperature. At last, excellent surface passivating ability of Al₂O₃ which deposited by atomic layer deposition was demonstrated in this paper.