Abstract
Passivation of a chemically etched GaAs surface with a self-assembling monolayer of octadecyl thiol was studied through the electrical characteristics of a Schottky diode. Enhanced Schottky barrier height was obtained with a Au contact without sacrificing Schottky diode characteristics. The structure of an octadecyl thiol passivation layer was also investigated by ellipsometry, infrared spectroscopy, contact angle measurement, and x-ray photoemission spectroscopy, and an attempt was made to correlate it with the Schottky diode characteristics.
| Original language | English (US) |
|---|---|
| Pages | 290-292 |
| Number of pages | 3 |
| State | Published - 1991 |
| Event | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: Aug 27 1991 → Aug 29 1991 |
Other
| Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
|---|---|
| City | Yokohama, Jpn |
| Period | 8/27/91 → 8/29/91 |
All Science Journal Classification (ASJC) codes
- General Engineering