Surface roughness in silicon carbide technology

K. Chang, T. Witt, A. Hoff, R. Woodin, R. Ridley, G. Dolny, K. Shanmugasundaram, E. Oborina, J. Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this experiment the effect of selected process conditions on the roughness of silicon carbide surfaces was investigated. Both wet and dry surface conditioning steps were implemented to alter surface roughness of bare and epitaxial 4H SiC. It was determined that aggressive wet cleaning procedures increase surface roughness while the same process using dilute chemistries reduces surface roughness. Also, a remote plasma H2N2 exposure results in the reduction of surface roughness. Surface roughness was found to have a limited impact on the characteristics of SiC Schottky diodes. On the other hand a dependence of electrical integrity of gate oxides on SiC surface roughness was observed. Overall, SiC surfaces have been shown to display sensitivity to the chemical cleaning environment at least as pronounced as silicon.

Original languageEnglish (US)
Title of host publicationCleaning Technology in Semiconductor Device Manufacturing IX
PublisherElectrochemical Society Inc.
Pages228-233
Number of pages6
Edition3
ISBN (Electronic)9781607685395
StatePublished - 2006
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameECS Transactions
Number3
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

All Science Journal Classification (ASJC) codes

  • General Engineering

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