Surface stress modification in silicon carbide by laser ablation

Ronald L. Jacobsen, Joseph Randi, Sarah Bertke

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We report the use of short pulse laser ablation as a technique for mitigation of subsurface stress and damage in SiC. Conventional machining, grinding or polishing of SiC renders a damaged surface layer of depth approximately equal to the final peak-to-valley roughness. This damage layer is comprised of compressive stress and represents a threat to the integrity of the material as sites for crack initiation. However, observations of the Twyman Effect of disk shaped samples suggest that laser ablation can remove the stress layer and substantially mitigate subsurface damage. Data are presented in support of this claim, along with comments on technique and applications.

    Original languageEnglish (US)
    Title of host publicationICALEO 2009 - 28th International Congress on Applications of Lasers and Electro-Optics, Congress Proceedings
    PublisherLaser Institute of America
    Pages1224-1227
    Number of pages4
    ISBN (Print)9780912035598
    DOIs
    StatePublished - 2009
    Event28th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2009 - Orlando, FL, United States
    Duration: Nov 2 2009Nov 5 2009

    Publication series

    NameICALEO 2009 - 28th International Congress on Applications of Lasers and Electro-Optics, Congress Proceedings
    Volume102

    Other

    Other28th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2009
    Country/TerritoryUnited States
    CityOrlando, FL
    Period11/2/0911/5/09

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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