TY - JOUR
T1 - Surface Structure Dependence of Mechanochemical Etching
T2 - Scanning Probe-Based Nanolithography Study on Si(100), Si(110), and Si(111)
AU - Xiao, Chen
AU - Xin, Xiaojun
AU - He, Xin
AU - Wang, Hongbo
AU - Chen, Lei
AU - Kim, Seong H.
AU - Qian, Linmao
N1 - Funding Information:
This work was supported by the Natural Science Foundation of China (Grant No. 51527901 and 51875486), Self-developed Project of State Key Laboratory of Traction Power (2017TPL_Z02) and the National Science Foundation of the USA (Grant No. CMMI-1435766). C.X. is supported by China Scholarship Council and Doctoral Innovation Fund Program of Southwest Jiaotong University (D-CX201709).
Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/6/12
Y1 - 2019/6/12
N2 - We employed a scanning probe-based lithography process on single-crystalline Si(100), Si(110), and Si(111) surfaces and studied the effects of crystallographic surface structures on mechanochemical etching of silicon in liquid water. The facet angle and etching rate of the mechanochemical process were different from those of the purely chemical etching process. In liquid water, the shape of the mechanochemically etched nanochannel appeared to be governed by thermodynamics of the etched surface, rather than stress distribution. Analyzing the etch rate with the mechanically assisted Arrhenius-type kinetics model showed that the shear-induced hydrolysis activity varies drastically with the crystallographic structure of silicon surface.
AB - We employed a scanning probe-based lithography process on single-crystalline Si(100), Si(110), and Si(111) surfaces and studied the effects of crystallographic surface structures on mechanochemical etching of silicon in liquid water. The facet angle and etching rate of the mechanochemical process were different from those of the purely chemical etching process. In liquid water, the shape of the mechanochemically etched nanochannel appeared to be governed by thermodynamics of the etched surface, rather than stress distribution. Analyzing the etch rate with the mechanically assisted Arrhenius-type kinetics model showed that the shear-induced hydrolysis activity varies drastically with the crystallographic structure of silicon surface.
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U2 - 10.1021/acsami.9b00133
DO - 10.1021/acsami.9b00133
M3 - Article
C2 - 31008584
AN - SCOPUS:85067336423
SN - 1944-8244
VL - 11
SP - 20583
EP - 20588
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 23
ER -