The authors have explored using a gallium focused ion beam (FIB) as a method of integrating lattice mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. This is one method for arranging materials at nanoscale dimensions that could potentially provide better properties or new functionalities to overcome limits in current device technologies. The FIB patterned templates are of interest as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga, the ion source for these experiments, at specific surface sites. The authors have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and surface topography. They have also used magnetron sputtering to deposit SiGe on the FIB patterned Si substrates after ex situ cleaning in order to understand how the template influences the resulting surface morphology that evolves. This morphology generally consists of pits and/or islands whose size and location are influenced by the patterning and growth conditions. The templates are characterized using atomic force microscopy (AFM) and transmission electron microscopy characterization. AFM of the resulting nanostructures are also shown after SiGe deposition.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry