Surface treatment for leakage reduction in AlGaN/GaN HEMTs

Rongming Chu; Likun Shen; Nick Fichtenbaum; Stacia Keller; Andrea Corrion; Christiane Poblenz; James Speck; Umesh Mishra

doi:10.1109/DRC.2007.4373682

Surface treatment for leakage reduction in AlGaN/GaN HEMTs

Rongming Chu, Likun Shen, Nick Fichtenbaum, Stacia Keller, Andrea Corrion, Christiane Poblenz, James Speck, Umesh Mishra

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Original language	English (US)
Title of host publication	65th DRC Device Research Conference
Pages	127-128
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373682
State	Published - Dec 1 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Other

Other	65th DRC Device Research Conference
Country/Territory	India
City	South Bend
Period	6/18/07 → 6/20/07

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2007.4373682

Cite this

@inproceedings{e9e0e4548650429ca197b0fcdf5dc610,

title = "Surface treatment for leakage reduction in AlGaN/GaN HEMTs",

author = "Rongming Chu and Likun Shen and Nick Fichtenbaum and Stacia Keller and Andrea Corrion and Christiane Poblenz and James Speck and Umesh Mishra",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/DRC.2007.4373682",

language = "English (US)",

isbn = "1424411025",

series = "65th DRC Device Research Conference",

pages = "127--128",

booktitle = "65th DRC Device Research Conference",

note = "65th DRC Device Research Conference ; Conference date: 18-06-2007 Through 20-06-2007",

}

TY - GEN

T1 - Surface treatment for leakage reduction in AlGaN/GaN HEMTs

AU - Chu, Rongming

AU - Shen, Likun

AU - Fichtenbaum, Nick

AU - Keller, Stacia

AU - Corrion, Andrea

AU - Poblenz, Christiane

AU - Speck, James

AU - Mishra, Umesh

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://www.scopus.com/inward/record.url?scp=47249145709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249145709&partnerID=8YFLogxK

U2 - 10.1109/DRC.2007.4373682

DO - 10.1109/DRC.2007.4373682

M3 - Conference contribution

AN - SCOPUS:47249145709

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

SP - 127

EP - 128

BT - 65th DRC Device Research Conference

T2 - 65th DRC Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -

Surface treatment for leakage reduction in AlGaN/GaN HEMTs

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

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Cite this