Surfactant assisted growth of MgO films on GaN

E. A. Paisley; T. C. Shelton; S. Mita; R. Collazo; H. M. Christen; Z. Sitar; M. D. Biegalski; J. P. Maria

doi:10.1063/1.4748886

Surfactant assisted growth of MgO films on GaN

E. A. Paisley, T. C. Shelton, S. Mita, R. Collazo, H. M. Christen, Z. Sitar, M. D. Biegalski, J. P. Maria

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Thin epitaxial films of 111 oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {111} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

Original language	English (US)
Article number	092904
Journal	Applied Physics Letters
Volume	101
Issue number	9
DOIs	https://doi.org/10.1063/1.4748886
State	Published - Aug 27 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4748886

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title = "Surfactant assisted growth of MgO films on GaN",

abstract = "Thin epitaxial films of 111 oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {111} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.",

author = "Paisley, {E. A.} and Shelton, {T. C.} and S. Mita and R. Collazo and Christen, {H. M.} and Z. Sitar and Biegalski, {M. D.} and Maria, {J. P.}",

note = "Funding Information: The authors acknowledge support from the National Science Foundation: DMR Grants 0547134, 1108071, and the Graduate Fellowship program. In addition, a portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2012",

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doi = "10.1063/1.4748886",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

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T1 - Surfactant assisted growth of MgO films on GaN

AU - Paisley, E. A.

AU - Shelton, T. C.

AU - Mita, S.

AU - Collazo, R.

AU - Christen, H. M.

AU - Sitar, Z.

AU - Biegalski, M. D.

AU - Maria, J. P.

N1 - Funding Information: The authors acknowledge support from the National Science Foundation: DMR Grants 0547134, 1108071, and the Graduate Fellowship program. In addition, a portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/8/27

Y1 - 2012/8/27

N2 - Thin epitaxial films of 111 oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {111} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

AB - Thin epitaxial films of 111 oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {111} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

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IS - 9

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ER -

Surfactant assisted growth of MgO films on GaN

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