Surfactant assisted growth of MgO films on GaN

E. A. Paisley, T. C. Shelton, S. Mita, R. Collazo, H. M. Christen, Z. Sitar, M. D. Biegalski, J. P. Maria

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Thin epitaxial films of 111 oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {111} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

Original languageEnglish (US)
Article number092904
JournalApplied Physics Letters
Issue number9
StatePublished - Aug 27 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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