Synchrotron X-ray metrology of dopant distribution and oxidation state in high pressure CVD grown TM2+:ZnSe optical fibers

High pressure chemical vapor deposition (HPCVD) has shown to be a promising method for producing Cr2+:ZnSe and Fe2+:ZnSe mid-IR optical fiber lasers. The oxidation state of the dopants and their spatial homogeneity are critical for the characterization of effective fiber laser performance; however, this is challenging for small fiber cores and small doping concentrations. We demonstrate using synchrotron micro X-ray fluorescence (XRF) mapping to study the distribution of the dopants throughout the fiber cross-sections. Furthermore, we study the local chemical environment of these unique fiber structures using micro X-ray near edge absorption spectroscopy (XANES). Our study reveals that transition metal doped ZnSe deposited using HPCVD has nanoscale dopant aggregation although the material is chemically identical to the commercially produced diffusion doped laser crystals, as indicated by the presence +2 oxidation state of the dopants.