Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

Y. C. Chen; X. Y. Zhong; A. R. Konicek; D. S. Grierson; N. H. Tai; I. N. Lin; B. Kabius; J. M. Hiller; A. V. Sumant; R. W. Carpick; O. Auciello

doi:10.1063/1.2838303

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

Y. C. Chen, X. Y. Zhong, A. R. Konicek, D. S. Grierson, N. H. Tai, I. N. Lin, B. Kabius, J. M. Hiller, A. V. Sumant, R. W. Carpick, O. Auciello

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

Original language	English (US)
Article number	133113
Journal	Applied Physics Letters
Volume	92
Issue number	13
DOIs	https://doi.org/10.1063/1.2838303
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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Chen, Y. C., Zhong, X. Y., Konicek, A. R., Grierson, D. S., Tai, N. H., Lin, I. N., Kabius, B., Hiller, J. M., Sumant, A. V., Carpick, R. W., & Auciello, O. (2008). Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth. Applied Physics Letters, 92(13), Article 133113. https://doi.org/10.1063/1.2838303

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title = "Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth",

abstract = "This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.",

author = "Chen, {Y. C.} and Zhong, {X. Y.} and Konicek, {A. R.} and Grierson, {D. S.} and Tai, {N. H.} and Lin, {I. N.} and B. Kabius and Hiller, {J. M.} and Sumant, {A. V.} and Carpick, {R. W.} and O. Auciello",

note = "Funding Information: The authors acknowledge the support of the U.S. Department of Energy, BES-Materials Sciences, both for work in the Materials Science Division and the new Center for Nanoscale Materials under Contract No. DE-AC02-06CH11357. R.W.C. acknowledges support from the Air Force Office of Scientific Research under Contract No. FA9550-05-1-0204. XANES measurements were conducted at the Synchrotron Radiation Center at the University of Wisconsin-Madison (NSF Grant No. DMR-0537588).",

year = "2008",

doi = "10.1063/1.2838303",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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TY - JOUR

T1 - Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

AU - Chen, Y. C.

AU - Zhong, X. Y.

AU - Konicek, A. R.

AU - Grierson, D. S.

AU - Tai, N. H.

AU - Lin, I. N.

AU - Kabius, B.

AU - Hiller, J. M.

AU - Sumant, A. V.

AU - Carpick, R. W.

AU - Auciello, O.

N1 - Funding Information: The authors acknowledge the support of the U.S. Department of Energy, BES-Materials Sciences, both for work in the Materials Science Division and the new Center for Nanoscale Materials under Contract No. DE-AC02-06CH11357. R.W.C. acknowledges support from the Air Force Office of Scientific Research under Contract No. FA9550-05-1-0204. XANES measurements were conducted at the Synchrotron Radiation Center at the University of Wisconsin-Madison (NSF Grant No. DMR-0537588).

PY - 2008

Y1 - 2008

N2 - This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

AB - This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

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JF - Applied Physics Letters

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ER -

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

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