Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

Y. C. Chen; X. Y. Zhong; A. R. Konicek; D. S. Grierson; N. H. Tai; I. N. Lin; B. Kabius; J. M. Hiller; A. V. Sumant; R. W. Carpick; O. Auciello

doi:10.1063/1.2838303

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

Y. C. Chen
, X. Y. Zhong
, A. R. Konicek
, D. S. Grierson
, N. H. Tai
, I. N. Lin
, B. Kabius
, J. M. Hiller
, A. V. Sumant
, R. W. Carpick
, O. Auciello

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

Original language	English (US)
Article number	133113
Journal	Applied Physics Letters
Volume	92
Issue number	13
DOIs	https://doi.org/10.1063/1.2838303
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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Chen, Y. C., Zhong, X. Y., Konicek, A. R., Grierson, D. S., Tai, N. H., Lin, I. N., Kabius, B., Hiller, J. M., Sumant, A. V., Carpick, R. W., & Auciello, O. (2008). Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth. Applied Physics Letters, 92(13), Article 133113. https://doi.org/10.1063/1.2838303

@article{9f518f2a0241457fad98f652e8b373ee,

title = "Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth",

abstract = "This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.",

author = "Chen, \{Y. C.\} and Zhong, \{X. Y.\} and Konicek, \{A. R.\} and Grierson, \{D. S.\} and Tai, \{N. H.\} and Lin, \{I. N.\} and B. Kabius and Hiller, \{J. M.\} and Sumant, \{A. V.\} and Carpick, \{R. W.\} and O. Auciello",

note = "Funding Information: The authors acknowledge the support of the U.S. Department of Energy, BES-Materials Sciences, both for work in the Materials Science Division and the new Center for Nanoscale Materials under Contract No. DE-AC02-06CH11357. R.W.C. acknowledges support from the Air Force Office of Scientific Research under Contract No. FA9550-05-1-0204. XANES measurements were conducted at the Synchrotron Radiation Center at the University of Wisconsin-Madison (NSF Grant No. DMR-0537588).",

year = "2008",

doi = "10.1063/1.2838303",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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T1 - Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

AU - Chen, Y. C.

AU - Zhong, X. Y.

AU - Konicek, A. R.

AU - Grierson, D. S.

AU - Tai, N. H.

AU - Lin, I. N.

AU - Kabius, B.

AU - Hiller, J. M.

AU - Sumant, A. V.

AU - Carpick, R. W.

AU - Auciello, O.

N1 - Funding Information: The authors acknowledge the support of the U.S. Department of Energy, BES-Materials Sciences, both for work in the Materials Science Division and the new Center for Nanoscale Materials under Contract No. DE-AC02-06CH11357. R.W.C. acknowledges support from the Air Force Office of Scientific Research under Contract No. FA9550-05-1-0204. XANES measurements were conducted at the Synchrotron Radiation Center at the University of Wisconsin-Madison (NSF Grant No. DMR-0537588).

PY - 2008

Y1 - 2008

N2 - This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

AB - This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

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VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133113

ER -

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

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