TY - JOUR
T1 - Synthesis, characterization, and dielectric properties of β-Gd 2(MoO4)3 thin films prepared by chemical solution deposition
AU - Ko, Song Won
AU - Mourey, Devin A.
AU - Clark, Trevor
AU - Trolier-Mckinstry, Susan
N1 - Funding Information:
Acknowledgments This work is supported by the Commonwealth of Pennsylvania and by NSF through the Material Research Science and Engineering Center Program (DMR-0080019 and DMR-0213623) and the Pennsylvania State University Materials Research Institute NanoFabrication Network and the National Science Foundation Cooperative Agreement No. 0335765, National Nanotechnology Infrastructure Network, with Cornell University. Stephan Yohe is acknowledged for his contributions to the powder work.
PY - 2010/6
Y1 - 2010/6
N2 - A chemical solution was employed for deposition of gadolinium molybdate [β-Gd2(MoO4)3] thin films. Gadolinium acetylacetonate hydrate {[CH3COCH = C(O-)CH3] 3Gd•xH2O}, molybdenum isopropoxide {Mo[OCH(CH 3)2]5}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of β-Gd2(MoO 4)3 occurs at around 480 °C. Phase-pure, orthorhombic β-Gd2(MoO4)3 films were deposited on Pt/Ti/SiO2/Si(100) substrates. β-Gd2(MoO 4)3 films crystallized at 750 °C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10~14 and the dielectric loss was less than 3%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 °C.
AB - A chemical solution was employed for deposition of gadolinium molybdate [β-Gd2(MoO4)3] thin films. Gadolinium acetylacetonate hydrate {[CH3COCH = C(O-)CH3] 3Gd•xH2O}, molybdenum isopropoxide {Mo[OCH(CH 3)2]5}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of β-Gd2(MoO 4)3 occurs at around 480 °C. Phase-pure, orthorhombic β-Gd2(MoO4)3 films were deposited on Pt/Ti/SiO2/Si(100) substrates. β-Gd2(MoO 4)3 films crystallized at 750 °C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10~14 and the dielectric loss was less than 3%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 °C.
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U2 - 10.1007/s10971-010-2180-2
DO - 10.1007/s10971-010-2180-2
M3 - Article
AN - SCOPUS:77953808007
SN - 0928-0707
VL - 54
SP - 269
EP - 275
JO - Journal of Sol-Gel Science and Technology
JF - Journal of Sol-Gel Science and Technology
IS - 3
ER -