Synthesis, characterization, and dielectric properties of β-Gd 2(MoO4)3 thin films prepared by chemical solution deposition

Song Won Ko; Devin A. Mourey; Trevor Clark; Susan Trolier-Mckinstry

doi:10.1007/s10971-010-2180-2

Synthesis, characterization, and dielectric properties of β-Gd ₂(MoO₄)₃ thin films prepared by chemical solution deposition

Song Won Ko
, Devin A. Mourey
, Trevor Clark
, Susan Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A chemical solution was employed for deposition of gadolinium molybdate [β-Gd₂(MoO₄)₃] thin films. Gadolinium acetylacetonate hydrate {[CH₃COCH = C(O-)CH₃] ₃Gd•xH₂O}, molybdenum isopropoxide {Mo[OCH(CH ₃)₂]₅}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of β-Gd₂(MoO ₄)₃ occurs at around 480 °C. Phase-pure, orthorhombic β-Gd₂(MoO₄)₃ films were deposited on Pt/Ti/SiO₂/Si(100) substrates. β-Gd₂(MoO ₄)₃ films crystallized at 750 °C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10~14 and the dielectric loss was less than 3%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 °C.

Original language	English (US)
Pages (from-to)	269-275
Number of pages	7
Journal	Journal of Sol-Gel Science and Technology
Volume	54
Issue number	3
DOIs	https://doi.org/10.1007/s10971-010-2180-2
State	Published - Jun 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
General Chemistry
Biomaterials
Condensed Matter Physics
Materials Chemistry

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10.1007/s10971-010-2180-2

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@article{4827c38453c34004a2dd07d7d4bc8d9e,

title = "Synthesis, characterization, and dielectric properties of β-Gd 2(MoO4)3 thin films prepared by chemical solution deposition",

abstract = "A chemical solution was employed for deposition of gadolinium molybdate [β-Gd2(MoO4)3] thin films. Gadolinium acetylacetonate hydrate \{[CH3COCH = C(O-)CH3] 3Gd•xH2O\}, molybdenum isopropoxide \{Mo[OCH(CH 3)2]5\}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of β-Gd2(MoO 4)3 occurs at around 480 °C. Phase-pure, orthorhombic β-Gd2(MoO4)3 films were deposited on Pt/Ti/SiO2/Si(100) substrates. β-Gd2(MoO 4)3 films crystallized at 750 °C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10\textasciitilde{}14 and the dielectric loss was less than 3\%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 °C.",

author = "Ko, \{Song Won\} and Mourey, \{Devin A.\} and Trevor Clark and Susan Trolier-Mckinstry",

note = "Funding Information: Acknowledgments This work is supported by the Commonwealth of Pennsylvania and by NSF through the Material Research Science and Engineering Center Program (DMR-0080019 and DMR-0213623) and the Pennsylvania State University Materials Research Institute NanoFabrication Network and the National Science Foundation Cooperative Agreement No. 0335765, National Nanotechnology Infrastructure Network, with Cornell University. Stephan Yohe is acknowledged for his contributions to the powder work.",

year = "2010",

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doi = "10.1007/s10971-010-2180-2",

language = "English (US)",

volume = "54",

pages = "269--275",

journal = "Journal of Sol-Gel Science and Technology",

issn = "0928-0707",

publisher = "Springer Netherlands",

number = "3",

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T1 - Synthesis, characterization, and dielectric properties of β-Gd 2(MoO4)3 thin films prepared by chemical solution deposition

AU - Ko, Song Won

AU - Mourey, Devin A.

AU - Clark, Trevor

AU - Trolier-Mckinstry, Susan

N1 - Funding Information: Acknowledgments This work is supported by the Commonwealth of Pennsylvania and by NSF through the Material Research Science and Engineering Center Program (DMR-0080019 and DMR-0213623) and the Pennsylvania State University Materials Research Institute NanoFabrication Network and the National Science Foundation Cooperative Agreement No. 0335765, National Nanotechnology Infrastructure Network, with Cornell University. Stephan Yohe is acknowledged for his contributions to the powder work.

PY - 2010/6

Y1 - 2010/6

N2 - A chemical solution was employed for deposition of gadolinium molybdate [β-Gd2(MoO4)3] thin films. Gadolinium acetylacetonate hydrate {[CH3COCH = C(O-)CH3] 3Gd•xH2O}, molybdenum isopropoxide {Mo[OCH(CH 3)2]5}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of β-Gd2(MoO 4)3 occurs at around 480 °C. Phase-pure, orthorhombic β-Gd2(MoO4)3 films were deposited on Pt/Ti/SiO2/Si(100) substrates. β-Gd2(MoO 4)3 films crystallized at 750 °C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10~14 and the dielectric loss was less than 3%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 °C.

AB - A chemical solution was employed for deposition of gadolinium molybdate [β-Gd2(MoO4)3] thin films. Gadolinium acetylacetonate hydrate {[CH3COCH = C(O-)CH3] 3Gd•xH2O}, molybdenum isopropoxide {Mo[OCH(CH 3)2]5}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of β-Gd2(MoO 4)3 occurs at around 480 °C. Phase-pure, orthorhombic β-Gd2(MoO4)3 films were deposited on Pt/Ti/SiO2/Si(100) substrates. β-Gd2(MoO 4)3 films crystallized at 750 °C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10~14 and the dielectric loss was less than 3%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 °C.

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U2 - 10.1007/s10971-010-2180-2

DO - 10.1007/s10971-010-2180-2

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AN - SCOPUS:77953808007

SN - 0928-0707

VL - 54

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JO - Journal of Sol-Gel Science and Technology

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ER -

Synthesis, characterization, and dielectric properties of β-Gd ₂(MoO₄)₃ thin films prepared by chemical solution deposition

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