TY - JOUR
T1 - Synthesis of rare-earth activated AlN and GaN powders via a three-step conversion process
AU - Tao, Jonathan H.
AU - Perea-Lopez, Nestor
AU - McKittrick, Joanna
AU - Talbot, Jan B.
AU - Klinedinst, Keith
AU - Raukas, Madis
AU - Laski, Joseph
AU - Mishra, Kailash C.
AU - Hirata, Gustavo
PY - 2008
Y1 - 2008
N2 - Using a three-step solution method, we have successfully synthesized rare-earth (RE) activated AlN, GaN, and pure GaAlN powders. Aluminium and/or gallium nitrates are first dissolved in water. For AlN:RE, rare-earth nitrates converted from their corresponding oxides of Dy3+ and Tm3+ are then added to the precursor nitrate solution. The mixture is subsequently converted into Al(OH)3:RE by combining with aqueous NH4OH at room temperature. The product is then mixed with aqueous NH4F to form (NH4)3AlF6:RE. The conversion process is complete when the hexafluoride compound is flushed with anhydrous ammonia to produce the final nitride product AlN:Dy3+,Tm3+. GaN, GaN:Tb3+ and GaAlN are synthesized similarly. Single phase, pure GaN and GaAlN formation has been confirmed. Dysprosium oxide has been observed in AlN:Dy3+, Tm3+. Oxygen concentration of approximately 4 at% has been measured in GaN powders, and is slightly higher in AlN powders. Spectroscopic measurements show clearly observable emission from Dy3+ and Tm3+ coactivated AlN samples. In activated GaN samples, Tb 3+ emission has been observed.
AB - Using a three-step solution method, we have successfully synthesized rare-earth (RE) activated AlN, GaN, and pure GaAlN powders. Aluminium and/or gallium nitrates are first dissolved in water. For AlN:RE, rare-earth nitrates converted from their corresponding oxides of Dy3+ and Tm3+ are then added to the precursor nitrate solution. The mixture is subsequently converted into Al(OH)3:RE by combining with aqueous NH4OH at room temperature. The product is then mixed with aqueous NH4F to form (NH4)3AlF6:RE. The conversion process is complete when the hexafluoride compound is flushed with anhydrous ammonia to produce the final nitride product AlN:Dy3+,Tm3+. GaN, GaN:Tb3+ and GaAlN are synthesized similarly. Single phase, pure GaN and GaAlN formation has been confirmed. Dysprosium oxide has been observed in AlN:Dy3+, Tm3+. Oxygen concentration of approximately 4 at% has been measured in GaN powders, and is slightly higher in AlN powders. Spectroscopic measurements show clearly observable emission from Dy3+ and Tm3+ coactivated AlN samples. In activated GaN samples, Tb 3+ emission has been observed.
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U2 - 10.1002/pssc.200778746
DO - 10.1002/pssc.200778746
M3 - Conference article
AN - SCOPUS:65449156164
SN - 1862-6351
VL - 5
SP - 1889
EP - 1891
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 6
T2 - 7th International Conference of Nitride Semiconductors, ICNS-7
Y2 - 16 September 2007 through 21 September 2007
ER -