Abstract
Using a three-step solution method, we have successfully synthesized rare-earth (RE) activated AlN, GaN, and pure GaAlN powders. Aluminium and/or gallium nitrates are first dissolved in water. For AlN:RE, rare-earth nitrates converted from their corresponding oxides of Dy3+ and Tm3+ are then added to the precursor nitrate solution. The mixture is subsequently converted into Al(OH)3:RE by combining with aqueous NH4OH at room temperature. The product is then mixed with aqueous NH4F to form (NH4)3AlF6:RE. The conversion process is complete when the hexafluoride compound is flushed with anhydrous ammonia to produce the final nitride product AlN:Dy3+,Tm3+. GaN, GaN:Tb3+ and GaAlN are synthesized similarly. Single phase, pure GaN and GaAlN formation has been confirmed. Dysprosium oxide has been observed in AlN:Dy3+, Tm3+. Oxygen concentration of approximately 4 at% has been measured in GaN powders, and is slightly higher in AlN powders. Spectroscopic measurements show clearly observable emission from Dy3+ and Tm3+ coactivated AlN samples. In activated GaN samples, Tb 3+ emission has been observed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1889-1891 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2008 |
| Event | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: Sep 16 2007 → Sep 21 2007 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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