Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

M. A. Fanton; J. A. Robinson; M. Hollander; B. E. Weiland; K. Trumbull; M. Labella

doi:10.1016/j.carbon.2010.03.072

Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

M. A. Fanton, J. A. Robinson, M. Hollander, B. E. Weiland, K. Trumbull, M. Labella

Research output: Contribution to journal › Letter › peer-review

4 Scopus citations

Abstract

Carbon films as thin as 5 nm were synthesized by graphitization of 4H-SiC substrates at 1200-1350 °C, in a dilute HCl/Ar atmosphere at a pressure of 0.8 bar. These films formed at significantly lower temperatures and higher pressures than conventional synthesis of epitaxial graphene by sublimation of Si. Graphitization rates of 0.08-1.40 nm/min were observed. The activation energy for graphitization was approximately 460 kJ/mol. Raman spectroscopy indicated that the material was highly disordered with D-peak to G-peak ratios ranging from 0.70 to 1.43, compared to high quality graphene which does not exhibit the disorder induced D-peak.

Original language	English (US)
Pages (from-to)	2671-2673
Number of pages	3
Journal	Carbon
Volume	48
Issue number	9
DOIs	https://doi.org/10.1016/j.carbon.2010.03.072
State	Published - Aug 2010

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science

Access to Document

10.1016/j.carbon.2010.03.072

Cite this

@article{6f149d678e6b4124bde9c2f9210b9da1,

title = "Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl",

abstract = "Carbon films as thin as 5 nm were synthesized by graphitization of 4H-SiC substrates at 1200-1350 °C, in a dilute HCl/Ar atmosphere at a pressure of 0.8 bar. These films formed at significantly lower temperatures and higher pressures than conventional synthesis of epitaxial graphene by sublimation of Si. Graphitization rates of 0.08-1.40 nm/min were observed. The activation energy for graphitization was approximately 460 kJ/mol. Raman spectroscopy indicated that the material was highly disordered with D-peak to G-peak ratios ranging from 0.70 to 1.43, compared to high quality graphene which does not exhibit the disorder induced D-peak.",

author = "Fanton, {M. A.} and Robinson, {J. A.} and M. Hollander and Weiland, {B. E.} and K. Trumbull and M. Labella",

note = "Funding Information: This work was supported by a 2009–2010 gift from the II–VI Foundation.",

year = "2010",

month = aug,

doi = "10.1016/j.carbon.2010.03.072",

language = "English (US)",

volume = "48",

pages = "2671--2673",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

AU - Fanton, M. A.

AU - Robinson, J. A.

AU - Hollander, M.

AU - Weiland, B. E.

AU - Trumbull, K.

AU - Labella, M.

N1 - Funding Information: This work was supported by a 2009–2010 gift from the II–VI Foundation.

PY - 2010/8

Y1 - 2010/8

N2 - Carbon films as thin as 5 nm were synthesized by graphitization of 4H-SiC substrates at 1200-1350 °C, in a dilute HCl/Ar atmosphere at a pressure of 0.8 bar. These films formed at significantly lower temperatures and higher pressures than conventional synthesis of epitaxial graphene by sublimation of Si. Graphitization rates of 0.08-1.40 nm/min were observed. The activation energy for graphitization was approximately 460 kJ/mol. Raman spectroscopy indicated that the material was highly disordered with D-peak to G-peak ratios ranging from 0.70 to 1.43, compared to high quality graphene which does not exhibit the disorder induced D-peak.

AB - Carbon films as thin as 5 nm were synthesized by graphitization of 4H-SiC substrates at 1200-1350 °C, in a dilute HCl/Ar atmosphere at a pressure of 0.8 bar. These films formed at significantly lower temperatures and higher pressures than conventional synthesis of epitaxial graphene by sublimation of Si. Graphitization rates of 0.08-1.40 nm/min were observed. The activation energy for graphitization was approximately 460 kJ/mol. Raman spectroscopy indicated that the material was highly disordered with D-peak to G-peak ratios ranging from 0.70 to 1.43, compared to high quality graphene which does not exhibit the disorder induced D-peak.

UR - http://www.scopus.com/inward/record.url?scp=77955229662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955229662&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2010.03.072

DO - 10.1016/j.carbon.2010.03.072

M3 - Letter

AN - SCOPUS:77955229662

SN - 0008-6223

VL - 48

SP - 2671

EP - 2673

JO - Carbon

JF - Carbon

IS - 9

ER -

Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this