Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

Hari P. Nair; Yang Liu; Jacob P. Ruf; Nathaniel J. Schreiber; Shun Li Shang; David J. Baek; Berit H. Goodge; Lena F. Kourkoutis; Zi Kui Liu; Kyle M. Shen; Darrell G. Schlom

doi:10.1063/1.5023477

Synthesis science of SrRuO₃ and CaRuO₃ epitaxial films with high residual resistivity ratios

Hari P. Nair
, Yang Liu
, Jacob P. Ruf
, Nathaniel J. Schreiber
, Shun Li Shang
, David J. Baek
, Berit H. Goodge
, Lena F. Kourkoutis
, Zi Kui Liu
, Kyle M. Shen
, Darrell G. Schlom

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

Epitaxial SrRuO₃ and CaRuO₃ films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuO_x (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO₃ and CaRuO₃ films with residual resistivity ratios (ρ_{300 K}/ρ_{4 K}) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

Original language	English (US)
Article number	046101
Journal	APL Materials
Volume	6
Issue number	4
DOIs	https://doi.org/10.1063/1.5023477
State	Published - Apr 1 2018

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1063/1.5023477

Cite this

@article{4d697fcee7bb4f5c9d7bbf4872ac72a9,

title = "Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios",

abstract = "Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.",

author = "Nair, \{Hari P.\} and Yang Liu and Ruf, \{Jacob P.\} and Schreiber, \{Nathaniel J.\} and Shang, \{Shun Li\} and Baek, \{David J.\} and Goodge, \{Berit H.\} and Kourkoutis, \{Lena F.\} and Liu, \{Zi Kui\} and Shen, \{Kyle M.\} and Schlom, \{Darrell G.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = apr,

day = "1",

doi = "10.1063/1.5023477",

language = "English (US)",

volume = "6",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "4",

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TY - JOUR

T1 - Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

AU - Nair, Hari P.

AU - Liu, Yang

AU - Ruf, Jacob P.

AU - Schreiber, Nathaniel J.

AU - Shang, Shun Li

AU - Baek, David J.

AU - Goodge, Berit H.

AU - Kourkoutis, Lena F.

AU - Liu, Zi Kui

AU - Shen, Kyle M.

AU - Schlom, Darrell G.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

AB - Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

UR - https://www.scopus.com/pages/publications/85045057686

UR - https://www.scopus.com/pages/publications/85045057686#tab=citedBy

U2 - 10.1063/1.5023477

DO - 10.1063/1.5023477

M3 - Article

AN - SCOPUS:85045057686

SN - 2166-532X

VL - 6

JO - APL Materials

JF - APL Materials

IS - 4

M1 - 046101

ER -

Synthesis science of SrRuO₃ and CaRuO₃ epitaxial films with high residual resistivity ratios

Abstract

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