Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

Hari P. Nair; Yang Liu; Jacob P. Ruf; Nathaniel J. Schreiber; Shun Li Shang; David J. Baek; Berit H. Goodge; Lena F. Kourkoutis; Zi Kui Liu; Kyle M. Shen; Darrell G. Schlom

doi:10.1063/1.5023477

Synthesis science of SrRuO₃ and CaRuO₃ epitaxial films with high residual resistivity ratios

Hari P. Nair, Yang Liu, Jacob P. Ruf, Nathaniel J. Schreiber, Shun Li Shang, David J. Baek, Berit H. Goodge, Lena F. Kourkoutis, Zi Kui Liu, Kyle M. Shen, Darrell G. Schlom

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

Epitaxial SrRuO₃ and CaRuO₃ films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuO_x (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO₃ and CaRuO₃ films with residual resistivity ratios (ρ_{300 K}/ρ_{4 K}) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

Original language	English (US)
Article number	046101
Journal	APL Materials
Volume	6
Issue number	4
DOIs	https://doi.org/10.1063/1.5023477
State	Published - Apr 1 2018

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1063/1.5023477

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@article{4d697fcee7bb4f5c9d7bbf4872ac72a9,

title = "Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios",

abstract = "Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.",

author = "Nair, \{Hari P.\} and Yang Liu and Ruf, \{Jacob P.\} and Schreiber, \{Nathaniel J.\} and Shang, \{Shun Li\} and Baek, \{David J.\} and Goodge, \{Berit H.\} and Kourkoutis, \{Lena F.\} and Liu, \{Zi Kui\} and Shen, \{Kyle M.\} and Schlom, \{Darrell G.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = apr,

day = "1",

doi = "10.1063/1.5023477",

language = "English (US)",

volume = "6",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

AU - Nair, Hari P.

AU - Liu, Yang

AU - Ruf, Jacob P.

AU - Schreiber, Nathaniel J.

AU - Shang, Shun Li

AU - Baek, David J.

AU - Goodge, Berit H.

AU - Kourkoutis, Lena F.

AU - Liu, Zi Kui

AU - Shen, Kyle M.

AU - Schlom, Darrell G.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

AB - Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

UR - https://www.scopus.com/pages/publications/85045057686

UR - https://www.scopus.com/inward/citedby.url?scp=85045057686&partnerID=8YFLogxK

U2 - 10.1063/1.5023477

DO - 10.1063/1.5023477

M3 - Article

AN - SCOPUS:85045057686

SN - 2166-532X

VL - 6

JO - APL Materials

JF - APL Materials

IS - 4

M1 - 046101

ER -

Synthesis science of SrRuO₃ and CaRuO₃ epitaxial films with high residual resistivity ratios

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