Systematics of electron mobility in Si/SiGe heterostructures

S. F. Nelson; K. Ismail; T. N. Jackson; J. J. Nocera; J. O. Chu; B. S. Meyerson

doi:10.1063/1.109910

Systematics of electron mobility in Si/SiGe heterostructures

S. F. Nelson, K. Ismail, T. N. Jackson, J. J. Nocera, J. O. Chu, B. S. Meyerson

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24 Scopus citations

Abstract

We have investigated limits to the low temperature electron mobility in modulation-doped Si/SiGe heterostructures grown by ultrahigh vacuum chemical vapor deposition. The temperature dependence and peak value of the mobility suggest that interface roughness is the chief scattering mechanism in samples with a thin buffer layer below the channel. Up to about 2 μm, increasing the thickness of the buffer layer raises the mobility. We have also observed a systematic increase of electron mobility with spacer (or setback) thickness, which is characteristic of remote ion scattering. The influence of background impurities is seen in the decrease of mobility with decreasing two-dimensional gas density.

Original language	English (US)
Pages (from-to)	794-796
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	6
DOIs	https://doi.org/10.1063/1.109910
State	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.109910

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title = "Systematics of electron mobility in Si/SiGe heterostructures",

abstract = "We have investigated limits to the low temperature electron mobility in modulation-doped Si/SiGe heterostructures grown by ultrahigh vacuum chemical vapor deposition. The temperature dependence and peak value of the mobility suggest that interface roughness is the chief scattering mechanism in samples with a thin buffer layer below the channel. Up to about 2 μm, increasing the thickness of the buffer layer raises the mobility. We have also observed a systematic increase of electron mobility with spacer (or setback) thickness, which is characteristic of remote ion scattering. The influence of background impurities is seen in the decrease of mobility with decreasing two-dimensional gas density.",

author = "Nelson, {S. F.} and K. Ismail and Jackson, {T. N.} and Nocera, {J. J.} and Chu, {J. O.} and Meyerson, {B. S.}",

year = "1993",

doi = "10.1063/1.109910",

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T1 - Systematics of electron mobility in Si/SiGe heterostructures

AU - Nelson, S. F.

AU - Ismail, K.

AU - Jackson, T. N.

AU - Nocera, J. J.

AU - Chu, J. O.

AU - Meyerson, B. S.

PY - 1993

Y1 - 1993

N2 - We have investigated limits to the low temperature electron mobility in modulation-doped Si/SiGe heterostructures grown by ultrahigh vacuum chemical vapor deposition. The temperature dependence and peak value of the mobility suggest that interface roughness is the chief scattering mechanism in samples with a thin buffer layer below the channel. Up to about 2 μm, increasing the thickness of the buffer layer raises the mobility. We have also observed a systematic increase of electron mobility with spacer (or setback) thickness, which is characteristic of remote ion scattering. The influence of background impurities is seen in the decrease of mobility with decreasing two-dimensional gas density.

AB - We have investigated limits to the low temperature electron mobility in modulation-doped Si/SiGe heterostructures grown by ultrahigh vacuum chemical vapor deposition. The temperature dependence and peak value of the mobility suggest that interface roughness is the chief scattering mechanism in samples with a thin buffer layer below the channel. Up to about 2 μm, increasing the thickness of the buffer layer raises the mobility. We have also observed a systematic increase of electron mobility with spacer (or setback) thickness, which is characteristic of remote ion scattering. The influence of background impurities is seen in the decrease of mobility with decreasing two-dimensional gas density.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

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Systematics of electron mobility in Si/SiGe heterostructures

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