Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC

C. M. Eichfeld; M. A. Horsey; S. E. Mohney; A. V. Adedeji; J. R. Williams

doi:10.1016/j.tsf.2005.04.005

Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC

C. M. Eichfeld, M. A. Horsey, S. E. Mohney, A. V. Adedeji, J. R. Williams

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A new diffusion barrier, Ta-Ru-N, has been tested on ohmic contacts to p⁺-4H-SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru: Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3 × 10^{- 5} Ω cm² were maintained after 2000 h of aging.

Original language	English (US)
Pages (from-to)	207-211
Number of pages	5
Journal	Thin Solid Films
Volume	485
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.04.005
State	Published - Aug 1 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.04.005

Cite this

@article{18da8042e19144b6aca9b8efe0b9f46d,

title = "Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC",

abstract = "A new diffusion barrier, Ta-Ru-N, has been tested on ohmic contacts to p+-4H-SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru: Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3 × 10- 5 Ω cm2 were maintained after 2000 h of aging.",

author = "Eichfeld, {C. M.} and Horsey, {M. A.} and Mohney, {S. E.} and Adedeji, {A. V.} and Williams, {J. R.}",

note = "Funding Information: This work was supported at Auburn University and The Pennsylvania State University by Air Force Contract No. F33615-01-C-2188 (James Scofield) and at Auburn University by the NASA Marshall Space Flight Center under Cooperative Agreement No. NCC8-237. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2005",

month = aug,

day = "1",

doi = "10.1016/j.tsf.2005.04.005",

language = "English (US)",

volume = "485",

pages = "207--211",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC

AU - Eichfeld, C. M.

AU - Horsey, M. A.

AU - Mohney, S. E.

AU - Adedeji, A. V.

AU - Williams, J. R.

N1 - Funding Information: This work was supported at Auburn University and The Pennsylvania State University by Air Force Contract No. F33615-01-C-2188 (James Scofield) and at Auburn University by the NASA Marshall Space Flight Center under Cooperative Agreement No. NCC8-237. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - A new diffusion barrier, Ta-Ru-N, has been tested on ohmic contacts to p+-4H-SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru: Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3 × 10- 5 Ω cm2 were maintained after 2000 h of aging.

AB - A new diffusion barrier, Ta-Ru-N, has been tested on ohmic contacts to p+-4H-SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru: Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3 × 10- 5 Ω cm2 were maintained after 2000 h of aging.

UR - http://www.scopus.com/inward/record.url?scp=21344434542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21344434542&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.04.005

DO - 10.1016/j.tsf.2005.04.005

M3 - Article

AN - SCOPUS:21344434542

SN - 0040-6090

VL - 485

SP - 207

EP - 211

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this