Tailoring the wettability of glass using a double-dielectric barrier discharge reactor

Quang Hung Trinh; Md Mokter Hossain; Seong H. Kim; Young Sun Mok

doi:10.1016/j.heliyon.2018.e00522

Tailoring the wettability of glass using a double-dielectric barrier discharge reactor

Quang Hung Trinh, Md Mokter Hossain, Seong H. Kim, Young Sun Mok

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Abstract

A double dielectric barrier discharge reactor operated at a low power frequency of 400 Hz and atmospheric pressure was utilized for regulating the wettability of glass surface. The hydrophobic treatment was performed by plasma polymerization of tetramethylsilane (TMS, in argon gas). The obtained results showed that the TMS coatings formed on the glass substrates without oxygen addition were smooth, uniform films with the maximum water contact angle (WCA) of about 106°, which were similar to those obtained by low pressure, high power frequency plasmas reported in the literature. The addition of oxygen into TMS/Ar plasma gas decreased the WCA and induced the formation of SiOSi and/or SiOC linkages, which dominated the existence of Si(CH₂)_nSi network formed in TMS/Ar (without oxygen) plasma.

Original language	English (US)
Article number	e00522
Journal	Heliyon
Volume	4
Issue number	1
DOIs	https://doi.org/10.1016/j.heliyon.2018.e00522
State	Published - Jan 2018

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10.1016/j.heliyon.2018.e00522

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title = "Tailoring the wettability of glass using a double-dielectric barrier discharge reactor",

abstract = "A double dielectric barrier discharge reactor operated at a low power frequency of 400 Hz and atmospheric pressure was utilized for regulating the wettability of glass surface. The hydrophobic treatment was performed by plasma polymerization of tetramethylsilane (TMS, in argon gas). The obtained results showed that the TMS coatings formed on the glass substrates without oxygen addition were smooth, uniform films with the maximum water contact angle (WCA) of about 106°, which were similar to those obtained by low pressure, high power frequency plasmas reported in the literature. The addition of oxygen into TMS/Ar plasma gas decreased the WCA and induced the formation of SiOSi and/or SiOC linkages, which dominated the existence of Si(CH2)nSi network formed in TMS/Ar (without oxygen) plasma.",

author = "Trinh, {Quang Hung} and Hossain, {Md Mokter} and Kim, {Seong H.} and Mok, {Young Sun}",

note = "Publisher Copyright: {\textcopyright} 2018 The Authors",

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AU - Trinh, Quang Hung

AU - Hossain, Md Mokter

AU - Kim, Seong H.

AU - Mok, Young Sun

PY - 2018/1

Y1 - 2018/1

N2 - A double dielectric barrier discharge reactor operated at a low power frequency of 400 Hz and atmospheric pressure was utilized for regulating the wettability of glass surface. The hydrophobic treatment was performed by plasma polymerization of tetramethylsilane (TMS, in argon gas). The obtained results showed that the TMS coatings formed on the glass substrates without oxygen addition were smooth, uniform films with the maximum water contact angle (WCA) of about 106°, which were similar to those obtained by low pressure, high power frequency plasmas reported in the literature. The addition of oxygen into TMS/Ar plasma gas decreased the WCA and induced the formation of SiOSi and/or SiOC linkages, which dominated the existence of Si(CH2)nSi network formed in TMS/Ar (without oxygen) plasma.

AB - A double dielectric barrier discharge reactor operated at a low power frequency of 400 Hz and atmospheric pressure was utilized for regulating the wettability of glass surface. The hydrophobic treatment was performed by plasma polymerization of tetramethylsilane (TMS, in argon gas). The obtained results showed that the TMS coatings formed on the glass substrates without oxygen addition were smooth, uniform films with the maximum water contact angle (WCA) of about 106°, which were similar to those obtained by low pressure, high power frequency plasmas reported in the literature. The addition of oxygen into TMS/Ar plasma gas decreased the WCA and induced the formation of SiOSi and/or SiOC linkages, which dominated the existence of Si(CH2)nSi network formed in TMS/Ar (without oxygen) plasma.

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Tailoring the wettability of glass using a double-dielectric barrier discharge reactor

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