@inproceedings{10d813806ea1463a9042a2566346ef7e,
title = "Tantalum-Ruthenium diffusion barriers for contacts to SiC",
abstract = "Tantalum-ruthenium diffusion barriers for contacts to SiC were investigated in this work. Stable specific contact resistances of (2 ±1) × 10-5 Ω cm2 and (4 ±2) × 10-5 Ω cm2 were measured on p-type 4H SiC for Al/Ni and Ni ohmic contacts, respectively, when they were beneath Ru-rich Ta-Ru barriers aged at 350 °C for 3000 h in air. Annealed Ni ohmic contacts on n-SiC aged at 350 °C in air for 1000 h (the longest time tested) are also very stable. Pull tests revealed greatly improved adhesion between layers in metallization stacks that contained Ta-Ru barriers in place of previously studied Ta-Ru-N barriers. A 5 nm Ta layer inserted between the Ru-rich Ta-Ru barriers and Au was found to further improve the adhesion of the metallization stacks.",
author = "Wang, {S. H.} and Owen Arnold and Eichfeld, {C. M.} and Mohney, {S. E.} and Adedeji, {A. V.} and Williams, {J. R.}",
year = "2006",
doi = "10.4028/0-87849-425-1.883",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "883--886",
booktitle = "Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005",
edition = "PART 2",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}