TDDB in a Deuterated Low-k Interlayer Dielectric

J. R. Lloyd; P. M. Lenahan; N. Mahmud; R. J. Waskiewicz

doi:10.1109/IIRW47491.2019.8989884

TDDB in a Deuterated Low-k Interlayer Dielectric

J. R. Lloyd, P. M. Lenahan, N. Mahmud, R. J. Waskiewicz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The behavior of normal and deuterated SiOC:H where the hydrogen in the dielectric was supplanted by deuterium was compared. The deuterated SiOC:H was seen to be significantly resistant to damage from TDDB (Time Dependent Dielectric Breakdown). These results strongly support the 'Lucky Electron' model for TDDB degradation in low-k dielectrics containing hydrogen.

Original language	English (US)
Title of host publication	2019 IEEE International Integrated Reliability Workshop, IIRW 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728122038
DOIs	https://doi.org/10.1109/IIRW47491.2019.8989884
State	Published - Oct 2019
Event	2019 IEEE International Integrated Reliability Workshop, IIRW 2019 - Fallen Leaf Lake, United States Duration: Oct 13 2019 → Oct 17 2019

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
Volume	2019-October

Conference

Conference	2019 IEEE International Integrated Reliability Workshop, IIRW 2019
Country/Territory	United States
City	Fallen Leaf Lake
Period	10/13/19 → 10/17/19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IIRW47491.2019.8989884

Cite this

Lloyd, J. R., Lenahan, P. M., Mahmud, N., & Waskiewicz, R. J. (2019). TDDB in a Deuterated Low-k Interlayer Dielectric. In 2019 IEEE International Integrated Reliability Workshop, IIRW 2019 Article 8989884 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2019-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW47491.2019.8989884

@inproceedings{c5c8c5d466564c59bd6d19f95a7b921a,

title = "TDDB in a Deuterated Low-k Interlayer Dielectric",

abstract = "The behavior of normal and deuterated SiOC:H where the hydrogen in the dielectric was supplanted by deuterium was compared. The deuterated SiOC:H was seen to be significantly resistant to damage from TDDB (Time Dependent Dielectric Breakdown). These results strongly support the 'Lucky Electron' model for TDDB degradation in low-k dielectrics containing hydrogen.",

author = "Lloyd, {J. R.} and Lenahan, {P. M.} and N. Mahmud and Waskiewicz, {R. J.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Integrated Reliability Workshop, IIRW 2019 ; Conference date: 13-10-2019 Through 17-10-2019",

year = "2019",

month = oct,

doi = "10.1109/IIRW47491.2019.8989884",

language = "English (US)",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Integrated Reliability Workshop, IIRW 2019",

address = "United States",

}

Lloyd, JR, Lenahan, PM, Mahmud, N & Waskiewicz, RJ 2019, TDDB in a Deuterated Low-k Interlayer Dielectric. in 2019 IEEE International Integrated Reliability Workshop, IIRW 2019., 8989884, IEEE International Integrated Reliability Workshop Final Report, vol. 2019-October, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Integrated Reliability Workshop, IIRW 2019, Fallen Leaf Lake, United States, 10/13/19. https://doi.org/10.1109/IIRW47491.2019.8989884

TDDB in a Deuterated Low-k Interlayer Dielectric. / Lloyd, J. R.; Lenahan, P. M.; Mahmud, N. et al.
2019 IEEE International Integrated Reliability Workshop, IIRW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8989884 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2019-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - TDDB in a Deuterated Low-k Interlayer Dielectric

AU - Lloyd, J. R.

AU - Lenahan, P. M.

AU - Mahmud, N.

AU - Waskiewicz, R. J.

PY - 2019/10

Y1 - 2019/10

N2 - The behavior of normal and deuterated SiOC:H where the hydrogen in the dielectric was supplanted by deuterium was compared. The deuterated SiOC:H was seen to be significantly resistant to damage from TDDB (Time Dependent Dielectric Breakdown). These results strongly support the 'Lucky Electron' model for TDDB degradation in low-k dielectrics containing hydrogen.

AB - The behavior of normal and deuterated SiOC:H where the hydrogen in the dielectric was supplanted by deuterium was compared. The deuterated SiOC:H was seen to be significantly resistant to damage from TDDB (Time Dependent Dielectric Breakdown). These results strongly support the 'Lucky Electron' model for TDDB degradation in low-k dielectrics containing hydrogen.

UR - http://www.scopus.com/inward/record.url?scp=85080081362&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85080081362&partnerID=8YFLogxK

U2 - 10.1109/IIRW47491.2019.8989884

DO - 10.1109/IIRW47491.2019.8989884

M3 - Conference contribution

AN - SCOPUS:85080081362

T3 - IEEE International Integrated Reliability Workshop Final Report

BT - 2019 IEEE International Integrated Reliability Workshop, IIRW 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE International Integrated Reliability Workshop, IIRW 2019

Y2 - 13 October 2019 through 17 October 2019

ER -

TDDB in a Deuterated Low-k Interlayer Dielectric

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this