Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers

Yongji Gong; Zhong Lin; Gonglan Ye; Gang Shi; Simin Feng; Yu Lei; Ana Laura Elías; Nestor Perea-Lopez; Robert Vajtai; Humberto Terrones; Zheng Liu; Mauricio Terrones; Pulickel M. Ajayan

doi:10.1021/acsnano.5b05594

Tellurium-Assisted Low-Temperature Synthesis of MoS₂ and WS₂ Monolayers

Yongji Gong, Zhong Lin, Gonglan Ye, Gang Shi, Simin Feng, Yu Lei, Ana Laura Elías, Nestor Perea-Lopez, Robert Vajtai, Humberto Terrones, Zheng Liu, Mauricio Terrones, Pulickel M. Ajayan

Research output: Contribution to journal › Article › peer-review

140 Scopus citations

Abstract

Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS₂ and WS₂ monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS₂ and WS₂ monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.

Original language	English (US)
Pages (from-to)	11658-11666
Number of pages	9
Journal	ACS nano
Volume	9
Issue number	12
DOIs	https://doi.org/10.1021/acsnano.5b05594
State	Published - Oct 26 2015

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering
General Physics and Astronomy

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@article{10952c9e2e244011a559aa6278fb1313,

title = "Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers",

abstract = "Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.",

author = "Yongji Gong and Zhong Lin and Gonglan Ye and Gang Shi and Simin Feng and Yu Lei and El{\'i}as, {Ana Laura} and Nestor Perea-Lopez and Robert Vajtai and Humberto Terrones and Zheng Liu and Mauricio Terrones and Ajayan, {Pulickel M.}",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = oct,

day = "26",

doi = "10.1021/acsnano.5b05594",

language = "English (US)",

volume = "9",

pages = "11658--11666",

journal = "ACS nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers

AU - Gong, Yongji

AU - Lin, Zhong

AU - Ye, Gonglan

AU - Shi, Gang

AU - Feng, Simin

AU - Lei, Yu

AU - Elías, Ana Laura

AU - Perea-Lopez, Nestor

AU - Vajtai, Robert

AU - Terrones, Humberto

AU - Liu, Zheng

AU - Terrones, Mauricio

AU - Ajayan, Pulickel M.

PY - 2015/10/26

Y1 - 2015/10/26

N2 - Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.

AB - Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.

UR - http://www.scopus.com/inward/record.url?scp=84952333964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84952333964&partnerID=8YFLogxK

U2 - 10.1021/acsnano.5b05594

DO - 10.1021/acsnano.5b05594

M3 - Article

C2 - 26502824

AN - SCOPUS:84952333964

SN - 1936-0851

VL - 9

SP - 11658

EP - 11666

JO - ACS nano

JF - ACS nano

IS - 12

ER -

Tellurium-Assisted Low-Temperature Synthesis of MoS₂ and WS₂ Monolayers

Abstract

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