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Temperature and Stress Metrology of Ultra-Wide Bandgap β-Ga
2
O
3
Thin Films
Bikramjit Chatterjee
, Jacob H. Leach
, Sarit Dhar
,
Sukwon Choi
Mechanical Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
3
Link opens in a new tab
Scopus citations
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Dive into the research topics of 'Temperature and Stress Metrology of Ultra-Wide Bandgap β-Ga
2
O
3
Thin Films'. Together they form a unique fingerprint.
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Keyphrases
Ga2O3
100%
Metrology
100%
Raman Spectra
12%
Multiple Peaks
12%
Thermoelastic Stress
12%
Temperature Effect
12%
High Power Density
12%
Electronic Properties
12%
Stress-induced
12%
Thermomechanical
12%
Epilayer
12%
Stress Effect
12%
Electronic Devices
12%
Reliability Issues
12%
Temperature Rise
12%
Thermal Conductivity
12%
Measurement Techniques
12%
Sapphire Substrate
12%
Device Technology
12%
Device-independent
12%
Micro-Raman
12%
Power Frequency
12%
Self-heating
12%
Large Temperature Gradient
12%
Wide Bandgap
12%
Multiphysics Model
12%
Radiofrequency Devices
12%
Wide Bandgap Devices
12%
Material Science
Thin Films
100%
Density
50%
Oxide Compound
50%
Halide
50%
Sapphire
50%
Electronic Property
50%
Thermal Conductivity
50%
Vapor Phase Epitaxy
50%
Gallium
50%
Engineering
Thin Films
100%
Band Gap
100%
Radio Frequency
20%
Power Density
20%
Thermal Conductivity
20%
Sapphire Substrate
20%
Temperature Rise
20%
Structural Reliability
20%
Reliability Issue
20%
Elastic Stress
20%
Raman Spectra
20%
Temperature Gradients
20%
Thermal Gradient
20%