Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

A. P. Zhang; G. Dang; F. Ren; J. Han; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. M. Redwing; H. Cho; S. J. Pearton

doi:10.1063/1.126791

Temperature dependence and current transport mechanisms in Al_xGa_1-xN Schottky rectifiers

A. P. Zhang
, G. Dang
, F. Ren
, J. Han
, A. Y. Polyakov
, N. B. Smirnov
, A. V. Govorkov
, J. M. Redwing
, H. Cho
, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

GaN and Al_0.25Ga_0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage V_B (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K^-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm^-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, R_ON, were 50 mΩcm² for GaN and 75 mΩcm² for AlGaN, producing figures-of-merit (V_RB)²/R_ON of 192 and 246 MW cm^-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

Original language	English (US)
Pages (from-to)	3816-3818
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	25
DOIs	https://doi.org/10.1063/1.126791
State	Published - Jun 19 2000

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.126791

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@article{fcf50113dc3840eeacf88f5f2d574c53,

title = "Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers",

abstract = "GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 50 mΩcm2 for GaN and 75 mΩcm2 for AlGaN, producing figures-of-merit (VRB)2/RON of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.",

author = "Zhang, \{A. P.\} and G. Dang and F. Ren and J. Han and Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Redwing, \{J. M.\} and H. Cho and Pearton, \{S. J.\}",

year = "2000",

month = jun,

day = "19",

doi = "10.1063/1.126791",

language = "English (US)",

volume = "76",

pages = "3816--3818",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

AU - Zhang, A. P.

AU - Dang, G.

AU - Ren, F.

AU - Han, J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Redwing, J. M.

AU - Cho, H.

AU - Pearton, S. J.

PY - 2000/6/19

Y1 - 2000/6/19

N2 - GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 50 mΩcm2 for GaN and 75 mΩcm2 for AlGaN, producing figures-of-merit (VRB)2/RON of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

AB - GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 50 mΩcm2 for GaN and 75 mΩcm2 for AlGaN, producing figures-of-merit (VRB)2/RON of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

UR - https://www.scopus.com/pages/publications/0001518844

UR - https://www.scopus.com/pages/publications/0001518844#tab=citedBy

U2 - 10.1063/1.126791

DO - 10.1063/1.126791

M3 - Article

AN - SCOPUS:0001518844

SN - 0003-6951

VL - 76

SP - 3816

EP - 3818

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Temperature dependence and current transport mechanisms in Al_xGa_1-xN Schottky rectifiers

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