Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
- T. Roy
- , E. X. Zhang
- , Y. S. Puzyrev
- , X. Shen
- , D. M. Fleetwood
- , R. D. Schrimpf
- , G. Koblmueller
- , R. Chu
- , C. Poblenz
- , N. Fichtenbaum
- , C. S. Suh
- , U. K. Mishra
- , J. S. Speck
- , S. T. Pantelides
Research output: Contribution to journal › Article › peer-review
53
Link opens in a new tab
Scopus
citations