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Temperature dependence of hydrogen implant on passivation of argon implant damage in silicon
H. C. Chien, S. Ashok, M. C. Chen
Engineering Science and Mechanics
Materials Research Institute (MRI)
Research output
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Contribution to journal
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Article
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peer-review
4
Scopus citations
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Dive into the research topics of 'Temperature dependence of hydrogen implant on passivation of argon implant damage in silicon'. Together they form a unique fingerprint.
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Keyphrases
Temperature Effect
100%
Substrate Temperature
100%
Argon
100%
Passivation
100%
Electrical Properties
50%
Atomic Hydrogen
50%
Schottky Contact
50%
Electrical Characteristics
50%
Schottky
50%
Si Surface
50%
Subsurface Damage
50%
Hydrogen Treatment
50%
Schottky Barrier Height
50%
Thin Surface Layer
50%
Hydrogen Passivation
50%
Engineering
Temperature Dependence
100%
Schottky Barrier
100%
Implant
100%
Substrate Temperature
100%
Passivation
100%
Subsurface
50%
Barrier Height
50%
Atomic Hydrogen
50%
Si Surface
50%
Surface Layer
50%
Material Science
Silicon
100%
Schottky Barrier
100%
Electrical Property
50%
Physics
Schottky Barrier Height
100%