Temperature-dependent I-V characteristics of a vertical In 0.53Ga0.47 tunnel FET

Saurabh Mookerjea; Dheeraj Mohata; Theresa Mayer; Vijay Narayanan; Suman Datta

doi:10.1109/LED.2010.2045631

Temperature-dependent I-V characteristics of a vertical In _0.53Ga_0.47 tunnel FET

Saurabh Mookerjea, Dheeraj Mohata, Theresa Mayer, Vijay Narayanan, Suman Datta

Research output: Contribution to journal › Article › peer-review

210 Scopus citations

Abstract

We report on the experimental temperature-dependent characteristics of vertical In_0.53Ga_0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor I_OFF) is determined by the ungated p ⁺-i-n⁺ reverse bias leakage and is dominated by Shockley-Read-Hall generationrecombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxidesemiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In_0.53Ga_0.47 TFET highlights the importance of passivating the IIIV and dielectric interface.

Original language	English (US)
Article number	5451179
Pages (from-to)	564-566
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2045631
State	Published - Jun 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2045631

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title = "Temperature-dependent I-V characteristics of a vertical In 0.53Ga0.47 tunnel FET",

abstract = "We report on the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor IOFF) is determined by the ungated p +-i-n+ reverse bias leakage and is dominated by Shockley-Read-Hall generationrecombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxidesemiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In0.53Ga0.47 TFET highlights the importance of passivating the IIIV and dielectric interface.",

author = "Saurabh Mookerjea and Dheeraj Mohata and Theresa Mayer and Vijay Narayanan and Suman Datta",

note = "Funding Information: Manuscript received January 27, 2010; revised March 3, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. This work was supported in part by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this letter was arranged by Editor G. Meneghesso.",

year = "2010",

month = jun,

doi = "10.1109/LED.2010.2045631",

language = "English (US)",

volume = "31",

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journal = "IEEE Electron Device Letters",

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T1 - Temperature-dependent I-V characteristics of a vertical In 0.53Ga0.47 tunnel FET

AU - Mookerjea, Saurabh

AU - Mohata, Dheeraj

AU - Mayer, Theresa

AU - Narayanan, Vijay

AU - Datta, Suman

N1 - Funding Information: Manuscript received January 27, 2010; revised March 3, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. This work was supported in part by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this letter was arranged by Editor G. Meneghesso.

PY - 2010/6

Y1 - 2010/6

N2 - We report on the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor IOFF) is determined by the ungated p +-i-n+ reverse bias leakage and is dominated by Shockley-Read-Hall generationrecombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxidesemiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In0.53Ga0.47 TFET highlights the importance of passivating the IIIV and dielectric interface.

AB - We report on the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor IOFF) is determined by the ungated p +-i-n+ reverse bias leakage and is dominated by Shockley-Read-Hall generationrecombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxidesemiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In0.53Ga0.47 TFET highlights the importance of passivating the IIIV and dielectric interface.

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U2 - 10.1109/LED.2010.2045631

DO - 10.1109/LED.2010.2045631

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SP - 564

EP - 566

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

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ER -

Temperature-dependent I-V characteristics of a vertical In _0.53Ga_0.47 tunnel FET

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