Temperature-dependent properties of nearly ideal ZnO schottky diodes

Martin W. Allen; Xiaojun Weng; Joan M. Redwing; Karthik Sarpatwari; Suzanne E. Mohney; Holger von Wenckstern; Marius Grundmann; Steven M. Durbin

doi:10.1109/TED.2009.2026393

Temperature-dependent properties of nearly ideal ZnO schottky diodes

Martin W. Allen, Xiaojun Weng, Joan M. Redwing, Karthik Sarpatwari, Suzanne E. Mohney, Holger von Wenckstern, Marius Grundmann, Steven M. Durbin

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The current-voltage characteristics of low-idealityfactor (1.09 at 300 K) ZnO Schottky diodes were investigated over the temperature range of 40-423 K. Planar geometry devices were fabricated on the Zn-polar face of a low carrier concentration (n = 1 × 10¹⁴ cm^-3 hydrothermally grown bulk ZnO single crystal wafer. The current transport was dominated by thermionic emission between 293 and 423 K, provided the ZnO surface was exposed to air. The nearly ideal characteristics of the diodes yielded an experimental Richardson constant of 10 ± 6 A 6 · cm^-2 · K^-2, close to the theoretical value of 32 A · cm^-2 · K^-2, and two orders of magnitude larger than previously reported values.

Original language	English (US)
Pages (from-to)	2160-2164
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	9
DOIs	https://doi.org/10.1109/TED.2009.2026393
State	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2009.2026393

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@article{c0863feb5b1149e1991f4c09ac20beb7,

title = "Temperature-dependent properties of nearly ideal ZnO schottky diodes",

abstract = "The current-voltage characteristics of low-idealityfactor (1.09 at 300 K) ZnO Schottky diodes were investigated over the temperature range of 40-423 K. Planar geometry devices were fabricated on the Zn-polar face of a low carrier concentration (n = 1 × 1014 cm-3 hydrothermally grown bulk ZnO single crystal wafer. The current transport was dominated by thermionic emission between 293 and 423 K, provided the ZnO surface was exposed to air. The nearly ideal characteristics of the diodes yielded an experimental Richardson constant of 10 ± 6 A 6 · cm-2 · K-2, close to the theoretical value of 32 A · cm-2 · K-2, and two orders of magnitude larger than previously reported values.",

author = "Allen, {Martin W.} and Xiaojun Weng and Redwing, {Joan M.} and Karthik Sarpatwari and Mohney, {Suzanne E.} and {von Wenckstern}, Holger and Marius Grundmann and Durbin, {Steven M.}",

note = "Funding Information: Manuscript received March 9, 2009; revised April 27, 2009. Current version published August 21, 2009. This work was supported in part by the Marsden Fund under Contract UOC0604 and in part by the MacDiarmid Institute for Advanced Materials and Nanotechnology. The review of this brief was arranged by Editor S. Bandyopadhyay.",

year = "2009",

doi = "10.1109/TED.2009.2026393",

language = "English (US)",

volume = "56",

pages = "2160--2164",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Temperature-dependent properties of nearly ideal ZnO schottky diodes

AU - Allen, Martin W.

AU - Weng, Xiaojun

AU - Redwing, Joan M.

AU - Sarpatwari, Karthik

AU - Mohney, Suzanne E.

AU - von Wenckstern, Holger

AU - Grundmann, Marius

AU - Durbin, Steven M.

N1 - Funding Information: Manuscript received March 9, 2009; revised April 27, 2009. Current version published August 21, 2009. This work was supported in part by the Marsden Fund under Contract UOC0604 and in part by the MacDiarmid Institute for Advanced Materials and Nanotechnology. The review of this brief was arranged by Editor S. Bandyopadhyay.

PY - 2009

Y1 - 2009

N2 - The current-voltage characteristics of low-idealityfactor (1.09 at 300 K) ZnO Schottky diodes were investigated over the temperature range of 40-423 K. Planar geometry devices were fabricated on the Zn-polar face of a low carrier concentration (n = 1 × 1014 cm-3 hydrothermally grown bulk ZnO single crystal wafer. The current transport was dominated by thermionic emission between 293 and 423 K, provided the ZnO surface was exposed to air. The nearly ideal characteristics of the diodes yielded an experimental Richardson constant of 10 ± 6 A 6 · cm-2 · K-2, close to the theoretical value of 32 A · cm-2 · K-2, and two orders of magnitude larger than previously reported values.

AB - The current-voltage characteristics of low-idealityfactor (1.09 at 300 K) ZnO Schottky diodes were investigated over the temperature range of 40-423 K. Planar geometry devices were fabricated on the Zn-polar face of a low carrier concentration (n = 1 × 1014 cm-3 hydrothermally grown bulk ZnO single crystal wafer. The current transport was dominated by thermionic emission between 293 and 423 K, provided the ZnO surface was exposed to air. The nearly ideal characteristics of the diodes yielded an experimental Richardson constant of 10 ± 6 A 6 · cm-2 · K-2, close to the theoretical value of 32 A · cm-2 · K-2, and two orders of magnitude larger than previously reported values.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Temperature-dependent properties of nearly ideal ZnO schottky diodes

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