TY - JOUR
T1 - Temperature-Dependent RF Characteristics of AlO-Passivated WSe MOSFETs
AU - Xiong, Kuanchen
AU - Zhang, Xiaotian
AU - Li, Lei
AU - Zhang, Fu
AU - Davis, Benjamin
AU - Madjar, Asher
AU - Goritz, Alexander
AU - Wietstruck, Matthias
AU - Kaynak, Mehmet
AU - Strandwitz, Nicholas C.
AU - Terrones, Mauricio
AU - Redwing, Joan M.
AU - Hwang, James C.M.
N1 - Publisher Copyright:
© 1980-2012 IEEE.
PY - 2020/7
Y1 - 2020/7
N2 - Of all two-dimensional semiconductor crystals, WSe2 is particularly interesting due to its sizable bandgap, high carrier mobility, and compatibility with large-scale synthesis. By passivating WSe2 MOSFETs with atomic-layer-deposited Al2O3, they are stable in room environment for more than five months. The passivation also increases their current capacity by two orders of magnitude. Their cutoff frequencies peak around room temperature, with the forward current cutoff frequency {f} {T} sim 0.6 GHz and the maximum frequency of oscillation {f}{{textit {MAX}}} sim 2 GHz. These results show WSe2 is a promising material for gigahertz thin-film transistors. However, if the surface passivation is not optimized, fixed charge in the passivation layer may lead to temporal and temperature instabilities.
AB - Of all two-dimensional semiconductor crystals, WSe2 is particularly interesting due to its sizable bandgap, high carrier mobility, and compatibility with large-scale synthesis. By passivating WSe2 MOSFETs with atomic-layer-deposited Al2O3, they are stable in room environment for more than five months. The passivation also increases their current capacity by two orders of magnitude. Their cutoff frequencies peak around room temperature, with the forward current cutoff frequency {f} {T} sim 0.6 GHz and the maximum frequency of oscillation {f}{{textit {MAX}}} sim 2 GHz. These results show WSe2 is a promising material for gigahertz thin-film transistors. However, if the surface passivation is not optimized, fixed charge in the passivation layer may lead to temporal and temperature instabilities.
UR - https://www.scopus.com/pages/publications/85087830247
UR - https://www.scopus.com/pages/publications/85087830247#tab=citedBy
U2 - 10.1109/LED.2020.2999906
DO - 10.1109/LED.2020.2999906
M3 - Article
AN - SCOPUS:85087830247
SN - 0741-3106
VL - 41
SP - 1134
EP - 1137
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 7
M1 - 9108204
ER -