Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs

K. C. Ku, S. H. Chun, W. H. Wang, D. A. Issadore, N. Samarth, R. J. Epstein, D. D. Awschalom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages411-412
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/TerritoryUnited States
CitySan Francisco
Period9/15/029/20/02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs'. Together they form a unique fingerprint.

Cite this