@inproceedings{d897b32e58514752944e13a95310ba8c,
title = "Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs",
abstract = "Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.",
author = "Ku, {K. C.} and Chun, {S. H.} and Wang, {W. H.} and Issadore, {D. A.} and N. Samarth and Epstein, {R. J.} and Awschalom, {D. D.}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",
year = "2002",
doi = "10.1109/MBE.2002.1037933",
language = "English (US)",
series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "411--412",
booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
address = "United States",
}