Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs

K. C. Ku; S. H. Chun; W. H. Wang; D. A. Issadore; Nitin Samarth; R. J. Epstein; D. D. Awschalom

doi:10.1109/MBE.2002.1037933

Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs

K. C. Ku, S. H. Chun, W. H. Wang, D. A. Issadore, Nitin Samarth, R. J. Epstein, D. D. Awschalom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.

Original language	English (US)
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	411-412
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037933
State	Published - Jan 1 2002
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002

Other

Other	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	9/15/02 → 9/20/02

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

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10.1109/MBE.2002.1037933

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Ku, K. C., Chun, S. H., Wang, W. H., Issadore, D. A., Samarth, N., Epstein, R. J., & Awschalom, D. D. (2002). Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 411-412). Article 1037933 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037933

@inproceedings{d897b32e58514752944e13a95310ba8c,

title = "Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs",

abstract = "Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.",

author = "Ku, {K. C.} and Chun, {S. H.} and Wang, {W. H.} and Issadore, {D. A.} and Nitin Samarth and Epstein, {R. J.} and Awschalom, {D. D.}",

year = "2002",

month = jan,

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doi = "10.1109/MBE.2002.1037933",

language = "English (US)",

pages = "411--412",

booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

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Ku, KC, Chun, SH, Wang, WH, Issadore, DA, Samarth, N, Epstein, RJ & Awschalom, DD 2002, Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037933, Institute of Electrical and Electronics Engineers Inc., pp. 411-412, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037933

Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs. / Ku, K. C.; Chun, S. H.; Wang, W. H. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 411-412 1037933.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs

AU - Ku, K. C.

AU - Chun, S. H.

AU - Wang, W. H.

AU - Issadore, D. A.

AU - Samarth, Nitin

AU - Epstein, R. J.

AU - Awschalom, D. D.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.

AB - Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.

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BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs

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