Abstract
Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.
Original language | English (US) |
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Title of host publication | MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 411-412 |
Number of pages | 2 |
ISBN (Electronic) | 0780375815, 9780780375819 |
DOIs | |
State | Published - Jan 1 2002 |
Event | 12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002 |
Other
Other | 12th International Conference on Molecular Beam Epitaxy, MBE 2002 |
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Country/Territory | United States |
City | San Francisco |
Period | 9/15/02 → 9/20/02 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry