Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor

Yan Zhu, Deepam Maurya, Shashank Priya, Mantu K. Hudait

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11 Scopus citations


Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

Original languageEnglish (US)
Pages (from-to)4947-4953
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number7
StatePublished - Apr 9 2014

All Science Journal Classification (ASJC) codes

  • General Materials Science


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