Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor

Yan Zhu; Deepam Maurya; Shashank Priya; Mantu K. Hudait

doi:10.1021/am405988f

Tensile-strained nanoscale Ge/In_0.16Ga_0.84As heterostructure for tunnel field-effect transistor

Yan Zhu, Deepam Maurya, Shashank Priya, Mantu K. Hudait

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Tensile strained Ge/In_0.16Ga_0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In_0.16Ga_0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In_0.16Ga_0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

Original language	English (US)
Pages (from-to)	4947-4953
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	7
DOIs	https://doi.org/10.1021/am405988f
State	Published - Apr 9 2014

All Science Journal Classification (ASJC) codes

General Materials Science

Access to Document

10.1021/am405988f

Cite this

@article{30b0272f3441463bae6f53165ae911fa,

title = "Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor",

abstract = "Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75\% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.",

author = "Yan Zhu and Deepam Maurya and Shashank Priya and Hudait, \{Mantu K.\}",

year = "2014",

month = apr,

day = "9",

doi = "10.1021/am405988f",

language = "English (US)",

volume = "6",

pages = "4947--4953",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor

AU - Zhu, Yan

AU - Maurya, Deepam

AU - Priya, Shashank

AU - Hudait, Mantu K.

PY - 2014/4/9

Y1 - 2014/4/9

N2 - Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

AB - Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

UR - https://www.scopus.com/pages/publications/84898406734

UR - https://www.scopus.com/inward/citedby.url?scp=84898406734&partnerID=8YFLogxK

U2 - 10.1021/am405988f

DO - 10.1021/am405988f

M3 - Article

AN - SCOPUS:84898406734

SN - 1944-8244

VL - 6

SP - 4947

EP - 4953

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 7

ER -

Tensile-strained nanoscale Ge/In_0.16Ga_0.84As heterostructure for tunnel field-effect transistor

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this