Engineering
Nanoscale
100%
Heterojunctions
100%
Field-Effect Transistor
100%
Tensiles
100%
Tunnel
100%
High Resolution
33%
Growth Condition
33%
Atomic Force Microscopy
33%
Two Dimensional
33%
Promising Candidate
33%
Barrier Height
33%
Tensile Strain
33%
Structural Property
33%
Ray Photoelectron Spectroscopy
33%
Tunnel Construction
33%
Crystalline Quality
33%
Root Mean Square
33%
Square Roughness
33%
Surface Morphology
33%
Gaas Heterostructures
33%
Material Science
Heterojunction
100%
Field Effect Transistor
100%
Molecular Beam Epitaxy
25%
Structural Property
25%
Gallium Arsenide
25%
High-Resolution Transmission Electron Microscopy
25%
X-Ray Photoelectron Spectroscopy
25%
Tensile Strain
25%
Surface Morphology
25%
Atomic Force Microscopy
25%
Keyphrases
Strained Ge
66%
Ge Layer
33%
Tunneling Barrier Width
33%
Controlled Growth Conditions
33%