Tensile-strained nanoscale Ge/In_0.16Ga_0.84As heterostructure for tunnel field-effect transistor

Engineering

• Atomic Force Microscopy 33%
• Barrier Height 33%
• Crystalline Quality 33%
• Field-Effect Transistor 100%
• Gaas Heterostructures 33%
• Growth Condition 33%
• Heterojunctions 100%
• High Resolution 33%
• Nanoscale 100%
• Promising Candidate 33%
• Ray Photoelectron Spectroscopy 33%
• Root Mean Square 33%
• Square Roughness 33%
• Structural Property 33%
• Surface Morphology 33%
• Tensile Strain 33%
• Tensiles 100%
• Tunnel 100%
• Tunnel Construction 33%
• Two Dimensional 33%

Material Science

• Atomic Force Microscopy 25%
• Field Effect Transistor 100%
• Gallium Arsenide 25%
• Heterojunction 100%
• High-Resolution Transmission Electron Microscopy 25%
• Molecular Beam Epitaxy 25%
• Structural Property 25%
• Surface Morphology 25%
• Tensile Strain 25%
• X-Ray Photoelectron Spectroscopy 25%

Keyphrases

• Controlled Growth Conditions 33%
• Ge Layer 33%
• Strained Ge 66%
• Tunneling Barrier Width 33%