Terahertz surface impedance of epitaxial MgB 2 thin film

B. B. Jin; P. Kuzel; F. Kadlec; T. Dahm; J. M. Redwing; A. V. Pogrebnyakov; X. X. Xi; N. Klein

doi:10.1063/1.2034107

Terahertz surface impedance of epitaxial MgB ₂ thin film

B. B. Jin, P. Kuzel, F. Kadlec, T. Dahm, J. M. Redwing, A. V. Pogrebnyakov, X. X. Xi, N. Klein

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We report on terahertz (THz) surface impedance measurement of an epitaxial Mg B2 thin film using time domain THz spectroscopy. We show that the surface resistance of the Mg B2 film is much lower than that of Y Ba2 Cu3 O7-δ and copper in the THz range. A linear dependence of the surface reactance on frequency is observed, yielding a penetration depth of about 100 nm at low temperatures. The measurements agree qualitatively with calculations based on impurity scattering in the Born limit. Our results clearly indicate that Mg B2 thin films have a great potential for THz electronic applications.

Original language	English (US)
Article number	092503
Journal	Applied Physics Letters
Volume	87
Issue number	9
DOIs	https://doi.org/10.1063/1.2034107
State	Published - Aug 29 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2034107

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@article{873e96be627b4f608948166979586eac,

title = "Terahertz surface impedance of epitaxial MgB 2 thin film",

abstract = "We report on terahertz (THz) surface impedance measurement of an epitaxial Mg B2 thin film using time domain THz spectroscopy. We show that the surface resistance of the Mg B2 film is much lower than that of Y Ba2 Cu3 O7-δ and copper in the THz range. A linear dependence of the surface reactance on frequency is observed, yielding a penetration depth of about 100 nm at low temperatures. The measurements agree qualitatively with calculations based on impurity scattering in the Born limit. Our results clearly indicate that Mg B2 thin films have a great potential for THz electronic applications.",

author = "Jin, {B. B.} and P. Kuzel and F. Kadlec and T. Dahm and Redwing, {J. M.} and Pogrebnyakov, {A. V.} and Xi, {X. X.} and N. Klein",

note = "Funding Information: The work at Penn State is supported in part by the ONR under Grant Nos. N00014-00-1-0294 (Xi) and N0014-01-1-0006 (Redwing), and by the NSF under Grant No. DMR-0306746 (Xi and Redwing). F. Kadlec and P. Kuzel are thankful to the Ministry of Education of the Czech Republic for the support (Project No. LC512).",

year = "2005",

month = aug,

day = "29",

doi = "10.1063/1.2034107",

language = "English (US)",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

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TY - JOUR

T1 - Terahertz surface impedance of epitaxial MgB 2 thin film

AU - Jin, B. B.

AU - Kuzel, P.

AU - Kadlec, F.

AU - Dahm, T.

AU - Redwing, J. M.

AU - Pogrebnyakov, A. V.

AU - Xi, X. X.

AU - Klein, N.

N1 - Funding Information: The work at Penn State is supported in part by the ONR under Grant Nos. N00014-00-1-0294 (Xi) and N0014-01-1-0006 (Redwing), and by the NSF under Grant No. DMR-0306746 (Xi and Redwing). F. Kadlec and P. Kuzel are thankful to the Ministry of Education of the Czech Republic for the support (Project No. LC512).

PY - 2005/8/29

Y1 - 2005/8/29

N2 - We report on terahertz (THz) surface impedance measurement of an epitaxial Mg B2 thin film using time domain THz spectroscopy. We show that the surface resistance of the Mg B2 film is much lower than that of Y Ba2 Cu3 O7-δ and copper in the THz range. A linear dependence of the surface reactance on frequency is observed, yielding a penetration depth of about 100 nm at low temperatures. The measurements agree qualitatively with calculations based on impurity scattering in the Born limit. Our results clearly indicate that Mg B2 thin films have a great potential for THz electronic applications.

AB - We report on terahertz (THz) surface impedance measurement of an epitaxial Mg B2 thin film using time domain THz spectroscopy. We show that the surface resistance of the Mg B2 film is much lower than that of Y Ba2 Cu3 O7-δ and copper in the THz range. A linear dependence of the surface reactance on frequency is observed, yielding a penetration depth of about 100 nm at low temperatures. The measurements agree qualitatively with calculations based on impurity scattering in the Born limit. Our results clearly indicate that Mg B2 thin films have a great potential for THz electronic applications.

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U2 - 10.1063/1.2034107

DO - 10.1063/1.2034107

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VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092503

ER -

Terahertz surface impedance of epitaxial MgB ₂ thin film

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