TES anthradithiophene solution-processed OTFTs with 1 cm2/V-s mobility

Chung Chen Kuo; Marcia M. Payne; John E. Anthony; Thomas N. Jackson

TES anthradithiophene solution-processed OTFTs with 1 cm²/V-s mobility

Chung Chen Kuo, Marcia M. Payne, John E. Anthony, Thomas N. Jackson

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl anthradithiophene (TES anthradithiophene) with 1 cm²/V-s mobility. The devices also have current on/off ratio > 10⁷ and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution-processed OTFTs reported to date and the first with performance comparable to thermally evaporated pentacene devices.

Original language	English (US)
Pages (from-to)	373-376
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 2004
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: Dec 13 2004 → Dec 15 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{81584d5c88854f43ba7b432927c64e42,

title = "TES anthradithiophene solution-processed OTFTs with 1 cm2/V-s mobility",

abstract = "We have fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl anthradithiophene (TES anthradithiophene) with 1 cm2/V-s mobility. The devices also have current on/off ratio > 107 and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution-processed OTFTs reported to date and the first with performance comparable to thermally evaporated pentacene devices.",

author = "Kuo, {Chung Chen} and Payne, {Marcia M.} and Anthony, {John E.} and Jackson, {Thomas N.}",

note = "Funding Information: This work was supported by Kodak and an NSF MRSEC.; IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

year = "2004",

language = "English (US)",

pages = "373--376",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - TES anthradithiophene solution-processed OTFTs with 1 cm2/V-s mobility

AU - Kuo, Chung Chen

AU - Payne, Marcia M.

AU - Anthony, John E.

AU - Jackson, Thomas N.

N1 - Funding Information: This work was supported by Kodak and an NSF MRSEC.

PY - 2004

Y1 - 2004

N2 - We have fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl anthradithiophene (TES anthradithiophene) with 1 cm2/V-s mobility. The devices also have current on/off ratio > 107 and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution-processed OTFTs reported to date and the first with performance comparable to thermally evaporated pentacene devices.

AB - We have fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl anthradithiophene (TES anthradithiophene) with 1 cm2/V-s mobility. The devices also have current on/off ratio > 107 and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution-processed OTFTs reported to date and the first with performance comparable to thermally evaporated pentacene devices.

UR - http://www.scopus.com/inward/record.url?scp=21644446116&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644446116&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:21644446116

SN - 0163-1918

SP - 373

EP - 376

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

TES anthradithiophene solution-processed OTFTs with 1 cm²/V-s mobility

Abstract

All Science Journal Classification (ASJC) codes

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