TF004 - Interfacing complex oxides to gallium nitride

M. D. Losego; H. S. Craft; S. Mita; T. Rice; R. Collazo; Z. Sitar; Jon-Paul Maria

doi:10.1109/ISAF.2008.4693846

TF004 - Interfacing complex oxides to gallium nitride

M. D. Losego, H. S. Craft, S. Mita, T. Rice, R. Collazo, Z. Sitar, Jon-Paul Maria

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.

Original language	English (US)
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Volume	2
DOIs	https://doi.org/10.1109/ISAF.2008.4693846
State	Published - Dec 1 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: Feb 23 2008 → Feb 28 2008

Other

Other	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country/Territory	United States
City	Santa Fe, NM
Period	2/23/08 → 2/28/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2008.4693846

Cite this

@inproceedings{a2f69fbceb604e81b6376e9bf30a731e,

title = "TF004 - Interfacing complex oxides to gallium nitride",

abstract = "Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.",

author = "Losego, {M. D.} and Craft, {H. S.} and S. Mita and T. Rice and R. Collazo and Z. Sitar and Jon-Paul Maria",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ISAF.2008.4693846",

language = "English (US)",

isbn = "1424427444",

volume = "2",

booktitle = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008",

note = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 ; Conference date: 23-02-2008 Through 28-02-2008",

}

Losego, MD, Craft, HS, Mita, S, Rice, T, Collazo, R, Sitar, Z & Maria, J-P 2008, TF004 - Interfacing complex oxides to gallium nitride. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. vol. 2, 4693846, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 2/23/08. https://doi.org/10.1109/ISAF.2008.4693846

TY - GEN

T1 - TF004 - Interfacing complex oxides to gallium nitride

AU - Losego, M. D.

AU - Craft, H. S.

AU - Mita, S.

AU - Rice, T.

AU - Collazo, R.

AU - Sitar, Z.

AU - Maria, Jon-Paul

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.

AB - Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.

UR - http://www.scopus.com/inward/record.url?scp=58149517224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149517224&partnerID=8YFLogxK

U2 - 10.1109/ISAF.2008.4693846

DO - 10.1109/ISAF.2008.4693846

M3 - Conference contribution

AN - SCOPUS:58149517224

SN - 1424427444

SN - 9781424427444

VL - 2

BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

Y2 - 23 February 2008 through 28 February 2008

ER -

TF004 - Interfacing complex oxides to gallium nitride

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this