TY - GEN
T1 - TF022 - Grain size effects of A:B site ratio in BaTiO3 thin films
AU - Daniels, P. R.
AU - Aygun, S.
AU - Ihlefeld, J. F.
AU - Borland, W.
AU - Maria, J. P.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - BaTiO3 films with thickness ∼1 micron were deposited on Pt and Cu foil substrates via a CSD process with varying A:B site ratios and were fired at temperatures ranging from 900 to 1200°C. The intent of this study is to determine the impact of A:B site ratio on phase assembly, grain growth, morphology, and film density. Films with excess Barium, up to 5%, fired at and above 1000°C exhibited grain sizes exceeding 5 microns with uniform and isotropic morphology. Films with excess Barium showed no formation of a secondary phase via XRD at 1100°C but a secondary phase was present at 1200°C with barium excess exceeding 4%. For films with large Ba excess and grain sizes in excess of 1 μm there is no evidence of tetragonality. Electrical testing as a function of voltage and temperature revealed room temperature permittivities of 4000 and tunability greater than 13:1 at 35V applied bias for Ba excess of 3%. Though more thorough research is needed, these results suggest that tuning the Ba:Ti ratio presents possibilities for dielectric property engineering in BaTiO3.
AB - BaTiO3 films with thickness ∼1 micron were deposited on Pt and Cu foil substrates via a CSD process with varying A:B site ratios and were fired at temperatures ranging from 900 to 1200°C. The intent of this study is to determine the impact of A:B site ratio on phase assembly, grain growth, morphology, and film density. Films with excess Barium, up to 5%, fired at and above 1000°C exhibited grain sizes exceeding 5 microns with uniform and isotropic morphology. Films with excess Barium showed no formation of a secondary phase via XRD at 1100°C but a secondary phase was present at 1200°C with barium excess exceeding 4%. For films with large Ba excess and grain sizes in excess of 1 μm there is no evidence of tetragonality. Electrical testing as a function of voltage and temperature revealed room temperature permittivities of 4000 and tunability greater than 13:1 at 35V applied bias for Ba excess of 3%. Though more thorough research is needed, these results suggest that tuning the Ba:Ti ratio presents possibilities for dielectric property engineering in BaTiO3.
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U2 - 10.1109/ISAF.2008.4693862
DO - 10.1109/ISAF.2008.4693862
M3 - Conference contribution
AN - SCOPUS:58149486184
SN - 1424427444
SN - 9781424427444
T3 - IEEE International Symposium on Applications of Ferroelectrics
BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Y2 - 23 February 2008 through 28 February 2008
ER -