The A-MOSFET-A majority carrier accumulation MOSFET

Pierre E. Schmidt; Mukunda B. Das; Paul D. Esqueda

doi:10.1016/0038-1101(82)90207-6

The A-MOSFET-A majority carrier accumulation MOSFET

Pierre E. Schmidt, Mukunda B. Das, Paul D. Esqueda

Penn State Berks

Research output: Contribution to journal › Article › peer-review

Abstract

A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. The basic current equation is obtained for an n-channel structure.

Original language	English (US)
Pages (from-to)	777-779
Number of pages	3
Journal	Solid State Electronics
Volume	25
Issue number	8
DOIs	https://doi.org/10.1016/0038-1101(82)90207-6
State	Published - Aug 1982

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(82)90207-6

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title = "The A-MOSFET-A majority carrier accumulation MOSFET",

abstract = "A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. The basic current equation is obtained for an n-channel structure.",

author = "Schmidt, {Pierre E.} and Das, {Mukunda B.} and Esqueda, {Paul D.}",

note = "Funding Information: Cientificas y Tecnological (CONICIT) for providing a travel grant and to the Instituto Venezolano de Investigaciones Cientificas (IVIC) where the work was done. This work was supported in part by CONICIT Grant No. SI-933.",

year = "1982",

month = aug,

doi = "10.1016/0038-1101(82)90207-6",

language = "English (US)",

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journal = "Solid State Electronics",

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AU - Schmidt, Pierre E.

AU - Das, Mukunda B.

AU - Esqueda, Paul D.

N1 - Funding Information: Cientificas y Tecnological (CONICIT) for providing a travel grant and to the Instituto Venezolano de Investigaciones Cientificas (IVIC) where the work was done. This work was supported in part by CONICIT Grant No. SI-933.

PY - 1982/8

Y1 - 1982/8

N2 - A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. The basic current equation is obtained for an n-channel structure.

AB - A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. The basic current equation is obtained for an n-channel structure.

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EP - 779

JO - Solid State Electronics

JF - Solid State Electronics

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ER -

The A-MOSFET-A majority carrier accumulation MOSFET

Abstract

All Science Journal Classification (ASJC) codes

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