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The adsorption-controlled growth of LuFe
2
O
4
by molecular-beam epitaxy
Charles M. Brooks
, Rajiv Misra
, Julia A. Mundy
, Lei A. Zhang
, Brian S. Holinsworth
, Kenneth R. O'Neal
, Tassilo Heeg
, Willi Zander
, J. Schubert
, Janice L. Musfeldt
,
Zi Kui Liu
, David A. Muller
, Peter Schiffer
, Darrell G. Schlom
Materials Science and Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
41
Scopus citations
Overview
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2
O
4
by molecular-beam epitaxy'. Together they form a unique fingerprint.
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Keyphrases
Adsorption
100%
Controlled Growth
100%
Direct Band Gap
25%
Epitaxial Film
25%
Excess Iron
25%
Film Stoichiometry
25%
Film Surface
25%
Film-substrate Interface
25%
Free-standing Film
25%
Growth Process
25%
Indirect Band Gap
25%
Iron-rich
25%
Magnetization
25%
MgAl2O4
25%
Molecular Beam Epitaxy
100%
Multiferroics
25%
Optical Spectroscopy
25%
Phase Transition
25%
Scanning Transmission Electron Microscopy
25%
Material Science
Epitaxial Film
50%
Film
100%
Magnesium Oxide
50%
Molecular Beam Epitaxy
100%
Multiferroic Material
50%
Optical Spectroscopy
50%
Scanning Transmission Electron Microscopy
50%
Surface (Surface Science)
50%