The analysis of wide band gap semiconductors using Raman spectroscopy

Keyphrases

• Raman Spectroscopy 100%
• AlGaN Layer 100%
• Wide Bandgap Semiconductors 100%
• Device Performance 75%
• GaN HEMT 50%
• Residual Strain 50%
• GaN Layers 50%
• Processing Methods 25%
• Tensile Strain 25%
• Direct Measurement 25%
• Residual Stress 25%
• Mechanical Stress 25%
• Defect States 25%
• Substrate-induced 25%
• Aluminum Gallium Nitride (AlGaN) 25%
• Through-thickness 25%
• Passivation 25%
• Trap States 25%
• Crystal Defects 25%
• Device Reliability 25%
• Al Content 25%
• Heteroepitaxial Growth 25%
• Large Electric Field 25%
• Device Degradation 25%
• Electrically Active Defects 25%

Engineering

• Device Performance 100%
• Gap Semiconductor 100%
• Band Gap 100%
• Residual Strain 66%
• Processing Method 33%
• Tensile Strain 33%
• Mechanical Stress 33%
• Passivation 33%
• Main Issue 33%
• Al Content 33%
• Electric Field 33%
• Imposed Strain 33%
• Induced Residual Stress 33%

Material Science

• Wide Band Gap Semiconductor 100%
• Raman Spectroscopy 100%
• Residual Strain 100%
• Tensile Strain 50%
• Residual Stress 50%
• Mechanical Stress 50%
• Crystal Defect 50%