@inproceedings{f5e2d754089a4f02a7287366b8402856,
title = "The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter",
abstract = "For current limitation of a single low voltage enhancement mode GaN HEMT, paralleling of GaN HEMT are essential in high current and low voltage applications. Through parallel GaN HEMT, the converter will increase the power handling capability and realize high efficiency. Driving paralleled operation GaN HEMT needs special care on parameters design of both driving circuit and power device layout, because the low gate-to-source maximum voltage (Vgs) rating and low gate threshold voltage (Vth) raise some strict constrains and challenges. This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the analysis of parasitic. The hardware prototype of a 300W flyback forward isolated converter with paralleling of GaN devices is implemented and presented in this paper.",
author = "Yajing Zhang and Jiuhe Wang and Hong Li and Lijie Wang and Yan Li and Zheng, {Trillion Q.}",
year = "2018",
month = may,
doi = "10.1109/WiPDAAsia.2018.8734540",
language = "English (US)",
series = "2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "30--35",
booktitle = "2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018",
address = "United States",
note = "1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 ; Conference date: 16-05-2018 Through 18-05-2018",
}