The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering

Wuze Xie; Dongbo Wang; Fengyun Guo; Teren Liu; Shujie Jiao; Jinzhong Wang; Shiyong Gao; Qingjiang Yu; Yong Zhang; Chunyang Luan; Wenwu Cao; Liancheng Zhao

doi:10.1007/s10854-016-5707-7

The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering

Wuze Xie, Dongbo Wang, Fengyun Guo, Teren Liu, Shujie Jiao, Jinzhong Wang, Shiyong Gao, Qingjiang Yu, Yong Zhang, Chunyang Luan, Wenwu Cao, Liancheng Zhao

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A series of cubic MgZnO films with a band gap of 5.0 eV (240 nm) are grown on the Si substrate by radio-frequency (rf) magnetron sputtering with various annealing temperature. Highly (111) textured single phase cubic MgZnO films with enhancement of conductivities are received through thermal annealing. The effects of annealing temperature on the structural, optical and electrical properties of cubic MgZnO films have been investigated. With increasing annealing temperature, phase separation of MgZnO films has been suppressed due to the internal strain is partially relieved by the thermal annealing. In addition, the resistivity (electron mobility, carrier concentration) decrease (increase) with an increase of annealing temperature which implies that high temperature annealing could improve the crystal quality and thereby reduce the grain boundary scattering for electron transport. Our results represent a meaningful step toward fabrication of high quality cubic MgZnO thin films use in UVC region.

Original language	English (US)
Pages (from-to)	1644-1651
Number of pages	8
Journal	Journal of Materials Science: Materials in Electronics
Volume	28
Issue number	2
DOIs	https://doi.org/10.1007/s10854-016-5707-7
State	Published - Jan 1 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-016-5707-7

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Xie, W., Wang, D., Guo, F., Liu, T., Jiao, S., Wang, J., Gao, S., Yu, Q., Zhang, Y., Luan, C., Cao, W., & Zhao, L. (2017). The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering. Journal of Materials Science: Materials in Electronics, 28(2), 1644-1651. https://doi.org/10.1007/s10854-016-5707-7

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title = "The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering",

abstract = "A series of cubic MgZnO films with a band gap of 5.0 eV (240 nm) are grown on the Si substrate by radio-frequency (rf) magnetron sputtering with various annealing temperature. Highly (111) textured single phase cubic MgZnO films with enhancement of conductivities are received through thermal annealing. The effects of annealing temperature on the structural, optical and electrical properties of cubic MgZnO films have been investigated. With increasing annealing temperature, phase separation of MgZnO films has been suppressed due to the internal strain is partially relieved by the thermal annealing. In addition, the resistivity (electron mobility, carrier concentration) decrease (increase) with an increase of annealing temperature which implies that high temperature annealing could improve the crystal quality and thereby reduce the grain boundary scattering for electron transport. Our results represent a meaningful step toward fabrication of high quality cubic MgZnO thin films use in UVC region.",

author = "Wuze Xie and Dongbo Wang and Fengyun Guo and Teren Liu and Shujie Jiao and Jinzhong Wang and Shiyong Gao and Qingjiang Yu and Yong Zhang and Chunyang Luan and Wenwu Cao and Liancheng Zhao",

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doi = "10.1007/s10854-016-5707-7",

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Xie, W, Wang, D, Guo, F, Liu, T, Jiao, S, Wang, J, Gao, S, Yu, Q, Zhang, Y, Luan, C, Cao, W & Zhao, L 2017, 'The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering', Journal of Materials Science: Materials in Electronics, vol. 28, no. 2, pp. 1644-1651. https://doi.org/10.1007/s10854-016-5707-7

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T1 - The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering

AU - Xie, Wuze

AU - Wang, Dongbo

AU - Guo, Fengyun

AU - Liu, Teren

AU - Jiao, Shujie

AU - Wang, Jinzhong

AU - Gao, Shiyong

AU - Yu, Qingjiang

AU - Zhang, Yong

AU - Luan, Chunyang

AU - Cao, Wenwu

AU - Zhao, Liancheng

PY - 2017/1/1

Y1 - 2017/1/1

N2 - A series of cubic MgZnO films with a band gap of 5.0 eV (240 nm) are grown on the Si substrate by radio-frequency (rf) magnetron sputtering with various annealing temperature. Highly (111) textured single phase cubic MgZnO films with enhancement of conductivities are received through thermal annealing. The effects of annealing temperature on the structural, optical and electrical properties of cubic MgZnO films have been investigated. With increasing annealing temperature, phase separation of MgZnO films has been suppressed due to the internal strain is partially relieved by the thermal annealing. In addition, the resistivity (electron mobility, carrier concentration) decrease (increase) with an increase of annealing temperature which implies that high temperature annealing could improve the crystal quality and thereby reduce the grain boundary scattering for electron transport. Our results represent a meaningful step toward fabrication of high quality cubic MgZnO thin films use in UVC region.

AB - A series of cubic MgZnO films with a band gap of 5.0 eV (240 nm) are grown on the Si substrate by radio-frequency (rf) magnetron sputtering with various annealing temperature. Highly (111) textured single phase cubic MgZnO films with enhancement of conductivities are received through thermal annealing. The effects of annealing temperature on the structural, optical and electrical properties of cubic MgZnO films have been investigated. With increasing annealing temperature, phase separation of MgZnO films has been suppressed due to the internal strain is partially relieved by the thermal annealing. In addition, the resistivity (electron mobility, carrier concentration) decrease (increase) with an increase of annealing temperature which implies that high temperature annealing could improve the crystal quality and thereby reduce the grain boundary scattering for electron transport. Our results represent a meaningful step toward fabrication of high quality cubic MgZnO thin films use in UVC region.

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

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The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering

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