The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker; C. S. Park; J. Barnett; P. S. Lysaght; P. D. Kirsch; C. D. Young; R. Choi; B. H. Lee; B. Foran; K. Van Benthem; S. J. Pennycook; P. M. Lenahan; J. T. Ryan

doi:10.1063/1.2362905

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. Van Benthem, S. J. Pennycook, P. M. Lenahan, J. T. Ryan

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Abstract

The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

Original language	English (US)
Article number	094108
Journal	Journal of Applied Physics
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.2362905
State	Published - 2006

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.2362905

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Bersuker, G., Park, C. S., Barnett, J., Lysaght, P. S., Kirsch, P. D., Young, C. D., Choi, R., Lee, B. H., Foran, B., Van Benthem, K., Pennycook, S. J., Lenahan, P. M., & Ryan, J. T. (2006). The effect of interfacial layer properties on the performance of Hf-based gate stack devices. Journal of Applied Physics, 100(9), Article 094108. https://doi.org/10.1063/1.2362905

@article{fcd4765ef8dc438c8091a875d3287eb8,

title = "The effect of interfacial layer properties on the performance of Hf-based gate stack devices",

abstract = "The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.",

author = "G. Bersuker and Park, {C. S.} and J. Barnett and Lysaght, {P. S.} and Kirsch, {P. D.} and Young, {C. D.} and R. Choi and Lee, {B. H.} and B. Foran and {Van Benthem}, K. and Pennycook, {S. J.} and Lenahan, {P. M.} and Ryan, {J. T.}",

note = "Funding Information: The authors thank A. Neugroschel, University of Florida, for measurements. One of the authors (K.v.B.) acknowledges partial financial support from the Alexander-von-Humboldt Foundation. Two of the authors (P.D.K. and B.H.L.) are IBM assignees to Front End Process Division at SEMATECH. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

doi = "10.1063/1.2362905",

language = "English (US)",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

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T1 - The effect of interfacial layer properties on the performance of Hf-based gate stack devices

AU - Bersuker, G.

AU - Park, C. S.

AU - Barnett, J.

AU - Lysaght, P. S.

AU - Kirsch, P. D.

AU - Young, C. D.

AU - Choi, R.

AU - Lee, B. H.

AU - Foran, B.

AU - Van Benthem, K.

AU - Pennycook, S. J.

AU - Lenahan, P. M.

AU - Ryan, J. T.

N1 - Funding Information: The authors thank A. Neugroschel, University of Florida, for measurements. One of the authors (K.v.B.) acknowledges partial financial support from the Alexander-von-Humboldt Foundation. Two of the authors (P.D.K. and B.H.L.) are IBM assignees to Front End Process Division at SEMATECH. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006

Y1 - 2006

N2 - The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

AB - The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

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JF - Journal of Applied Physics

IS - 9

M1 - 094108

ER -

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

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