@inproceedings{b67fe13f07784b3e926973f024370b34,
title = "The effect of nitrogen on the 4H-SiC/SiO2 interface studied with variable resonance frequency spin dependent charge pumping",
abstract = "In this work, we study the effects of NO anneals on the interface of 4H-SiC MOSFETs via spin dependent charge pumping, an electrically detected magnetic resonance technique. We make measurements at high and ultra-low resonance frequencies. Our results indicate that the NO anneals both change the silicon vacancy energy levels as well as induce disorder at the interface. In addition, our results indicate that the changes in energy levels involve N atoms very close to VSi sites.",
author = "Anders, {Mark A.} and Lenahan, {Patrick M.} and Lelis, {Aivars J.}",
note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 ; Conference date: 17-09-2017 Through 22-09-2017",
year = "2018",
doi = "10.4028/www.scientific.net/MSF.924.469",
language = "English (US)",
isbn = "9783035711455",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "469--472",
editor = "Robert Stahlbush and Philip Neudeck and Anup Bhalla and Devaty, {Robert P.} and Michael Dudley and Aivars Lelis",
booktitle = "Silicon Carbide and Related Materials, 2017",
}