TY - JOUR
T1 - The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors
AU - Hughart, D. R.
AU - Schrimpf, Ronald D.
AU - Fleetwood, Daniel M.
AU - Chen, X. Jie
AU - Barnaby, Hugh J.
AU - Holbert, Keith E.
AU - Pease, Ronald L.
AU - Platteter, Dale G.
AU - Tuttle, Blair R.
AU - Pantelides, Sokrates T.
N1 - Funding Information:
Manuscript received July 17, 2009; revised September 07, 2009. Current version published December 09, 2009. This work was supported by the Air Force Office of Scientific Research with funding from the MURI program, the NASA Electronic Parts Program, and the Defense Threat Reduction Agency. D. R. Hughart, R. D. Schrimpf, and D. M. Fleetwood are with the Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected], [email protected], [email protected]). X. J. Chen is with Radiation Monitoring Devices, Inc., Watertown, MA 02472 USA (e-mail: [email protected]). H. J. Barnaby and K. E. Holbert are with Arizona State University, Tempe, AZ 85287 USA (e-mail: [email protected], [email protected]). R. L. Pease is with RLP Research, Los Lunas, NM 87031 USA (e-mail: [email protected]). D. G. Platteter is with Platteter Enterprises, Bedford, IN 47421 USA (e-mail: [email protected]). B. R. Tuttle and S. T. Pantelides are with the Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 USA (e-mail: brt10@psu. edu, [email protected]). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2009.2034151
PY - 2009/12
Y1 - 2009/12
N2 - Complex interplay between hydrogen-related defect formation and passivation is observed in irradiated bipolar transistors. Hydrogen soaking experiments are performed to evaluate the dependence of defect buildup and annealing in gated lateral bipolar transistors on hydrogen exposure. Comparisons of the radiation responses of transistors tested in 2009 to identical devices from the same wafer tested in 2003 show that aging has reduced the amount of radiatION-induced interface trap and oxide trapped charge formation in most cases. These results demonstrate that the way in which the radiation response of a hydrogen-sensitive device evolves with age depends on whether hydrogen is diffusing into or out of the device, and whether the initial defect concentration favors passivation or depassivation reactions. These results strongly suggest that hydrogen exposure cannot replace low-dose-rate irradiation in ELDRS tests for bipolar devices and ICs without extensive characterization testing.
AB - Complex interplay between hydrogen-related defect formation and passivation is observed in irradiated bipolar transistors. Hydrogen soaking experiments are performed to evaluate the dependence of defect buildup and annealing in gated lateral bipolar transistors on hydrogen exposure. Comparisons of the radiation responses of transistors tested in 2009 to identical devices from the same wafer tested in 2003 show that aging has reduced the amount of radiatION-induced interface trap and oxide trapped charge formation in most cases. These results demonstrate that the way in which the radiation response of a hydrogen-sensitive device evolves with age depends on whether hydrogen is diffusing into or out of the device, and whether the initial defect concentration favors passivation or depassivation reactions. These results strongly suggest that hydrogen exposure cannot replace low-dose-rate irradiation in ELDRS tests for bipolar devices and ICs without extensive characterization testing.
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U2 - 10.1109/TNS.2009.2034151
DO - 10.1109/TNS.2009.2034151
M3 - Article
AN - SCOPUS:72349092551
SN - 0018-9499
VL - 56
SP - 3361
EP - 3366
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 6
M1 - 5341350
ER -