The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

Engineering & Materials Science

• Hot electrons 100%
• Silicon oxides 97%
• Boron 76%
• Doping (additives) 74%
• Field effect transistors 71%
• Electron mobility 35%
• Electric current measurement 13%
• Impurities 10%
• Scattering 10%
• Electric fields 10%
• Transistors 9%
• Degradation 7%
• Metals 7%

Physics & Astronomy

• silicon transistors 92%
• hot electrons 69%
• metal oxides 64%
• boron 57%
• field effect transistors 52%
• performance 29%
• electron mobility 15%
• causes 9%
• pumping 6%
• transistors 5%
• electron energy 5%
• degradation 5%
• traps 5%
• impurities 4%
• electric fields 4%
• scattering 3%
• electrons 3%

Chemical Compounds

• Hot Electron 96%
• Field Effect 66%
• Electron Mobility 40%
• Charge Pumping 34%
• Boron Atom 29%
• Interface Trap 27%
• Trap Density Measurement 25%
• Electric Field 15%
• Compound Mobility 12%
• Resistance 10%
• Electron Particle 9%
• Energy 7%
• Reduction 7%