Abstract
Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.
Original language | English (US) |
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Article number | 6359809 |
Pages (from-to) | 3087-3092 |
Number of pages | 6 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 59 |
Issue number | 6 |
DOIs | |
State | Published - 2012 |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering